Mo***r Electronics : IXFN360N15T2 IXYS
IXFN360N15T2 IXYS Discrete Semiconductor Modules GigaMOS Trench T2 HiperFET PWR MOSFET datasheet, inventory, & pricing.
Di***ey : IXFN360N15T2 IXYS | Discrete Semiconductor Products
Order today, ships today. IXFN360N15T2 – N-Channel 150 V 310A (Tc) 1070W (Tc) Chassis Mount SOT-227B from IXYS. Pricing and Availability on millions of ...
Li***lfuse : IXFN360N15T2
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC).
Oc***art : IXFN360N15T2 | Distributors, Price, and ...
Physical. Case/Package, SOT-227-4. Mount, Chassis Mount. Technical. Continuous Drain Current (ID), 310 A. Drain to Source Resistance, 4 mΩ.
RS***line : IXFN360N15T2
IXFN360N15T2. Either Source Terminal S can be used as the Source Terminal or the Kelvin Source. ( Gate Return ) Terminal. DS100180A(12/20).
TM*** : IXFN360N15T2 IXYS - Module | single transistor; 150V; 310A
Specification ; Type of module. MOSFET transistor ; Semiconductor structure. single transistor ; Drain-source voltage. 150V ; Drain current. 310A ; Case. SOT227B.
Al***ransistors. Datasheet : IXFN360N15T2 MOSFET. Datasheet pdf. Equivalent
Equivalent. Type Designator: IXFN360N15T2. Type of Transistor: MOSFET. Type of Control Channel: N -Channel. Maximum Power Dissipation (Pd): 1070 W.
el*** Elektronik : IXFN360N15T2 Littelfuse power MOSFETs, SOT227B ...
Specifications ; Manufacturer's name, IXFN360N15T2 ; Case, SOT227B ; Max. drain-source voltage [V], 150 ; Max. drain-source on-resistance [Ω], 0,004 ; Max.
AL***TASHEET : IXFN360N15T2 Datasheet(PDF) - IXYS Corporation
GigaMOSTrenchT2 HiperFET Power MOSFET, IXFN360N15T2 Datasheet, IXFN360N15T2 circuit, IXFN360N15T2 data sheet : IXYS, alldatasheet, Datasheet, ...
Da***heetsPDF : IXFN360N15T2 Datasheet | IXYS Corporation
Part Number, IXFN360N15T2. Description, GigaMOS TrenchT2 HiperFET Power MOSFET. Feature, Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power ...