Mo***r Electronics : IXFN100N20 IXYS
IXFN100N20 IXYS Discrete Semiconductor Modules 100 Amps 200V 0.023 Rds datasheet, inventory, & pricing.
Oc***art : IXFN100N20 - IXYS - Octopart
IXYS ; Drain to Source Resistance, 23 mΩ ; Drain to Source Voltage (Vdss), 200 V ; Fall Time, 30 ns ; Gate to Source Voltage (Vgs), 20 V ; Input Capacitance, 9 nF.
Di***ey : IXFN100N20 IXYS | Discrete Semiconductor Products
Order today, ships today. IXFN100N20 – N-Channel 200 V 100A (Tc) 520W (Tc) Chassis Mount SOT-227B from IXYS. Pricing and Availability on millions of ...
Li***lfuse : IXFN100N20
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate ...
Da***heetsPDF : IXFN100N20 Datasheet, Equivalent, Power MOSFETs.
IXYS Corporation IXFN100N20 | MOSFETs. DataSheet4U Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt.
Da***heetsPDF : IXFN100N20 Datasheet | IXYS Corporation
Part Number, IXFN100N20. Description, HiPerFET Power MOSFETs. Feature, DataSheet4U Power MOSFETs N-Channel Enhancement Mode Avalanche ...
AL***TASHEET : IXFN100N20 Datasheet(PDF) - IXYS Corporation
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr. Features ○ International standard packages ○ JEDECTO-264 AA,epoxymeet UL94V-0, ...
Al***ransistors. Datasheet : IXFN100N20 MOSFET. Datasheet pdf. Equivalent
Equivalent. Type Designator: IXFN100N20. Type of Transistor: MOSFET. Type of Control Channel: N -Channel. Maximum Power Dissipation (Pd): 521 W.
hi***el : HiPerFETTM Power MOSFETs
VGS = 10 V, ID = 0.5 • ID25. Pulse test, t £ 300 ms,. IXFK90N20. 023 W duty cycle d £ 2 %. IXFN100N20. 023 W. IXFN106N20. 020 W. TO-264 AA (IXFK).