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Tanssion > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > SIHH11N65E-T1-GE3

SIHH11N65E-T1-GE3 Vishay

SIHH11N65E-T1-GE3
  • Part Number: SIHH11N65E-T1-GE3
  • Manufacturer: Vishay
  • Description: In stock. Alternative models available.
  • Lifecycle: New from this manufacturer
  • Datasheet:
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  • Payment: T/T Paypal Visa MoneyGram Western Union
  • More Information: SIHH11N65E-T1-GE3 More Information
  • ECAD: Request Free CAD Models
Stock : 4873 Can Ship Immediately

Unit Price: Call

Qty Unit Price
1+: $2.29

Sub Total: $2.29

Minimum: 1 Multiples: 1
RFQ

Current price of SIHH11N65E-T1-GE3 is for reference only,please send email to sales@tanssion.com to get the newest price.

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  • T/T

    T/T
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  • Visa

    Visa
  • MoneyGram

    MoneyGram
  • Western Union

    Western Union

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    From $40.00 basic shipping fee depend on zone

  • UPS(www.ups.com)

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  • Registered Mail(www.singpost.com)

    From $40.00 basic shipping fee depend on zone

SIHH11N65E-T1-GE3 Information

  • Specifications
  • Datasheet
  • Product Details
  • Reviews

Vishay SIHH11N65E-T1-GE3 technical specifications,attributes, parameters and parts with similar specifications to Vishay SIHH11N65E-T1-GE3.

  • Type
    Parameter
  • SIHH11N65E-T1-GE3
  • Manufacturer
    Vishay
  • Pricing(USD)
    $2.29
  • Remark
    Manufacturer: Vishay.
    Tanssion is one of the Distributors.
    Wide range of applications.
  • Mount
    Surface Mount
  • Schedule B
    8541290080
  • Input Capacitance
    1.257 nF
  • Max Operating Temperature
    150 °C
  • Continuous Drain Current (ID)
    12 A
  • Type
    Parameter
  • Products Category
    Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
  • SIHH11N65E-T1-GE3.pdf
  • 4873 In Stock
  • Applications
  • Rds On Max
    363 mΩ
  • Number of Pins
    8
  • Max Power Dissipation
    130 W
  • Min Operating Temperature
    -55 °C
  • Drain to Source Voltage (Vdss)
    650 V

Download datasheets and manufacturer documentation for Vishay SIHH11N65E-T1-GE3

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SIHH11N65E-T1-GE3 Overview

SIHH11N65E-T1-GE3 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SIHH11N65E-T1-GE3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. SIHH11N65E-T1-GE3 is widely used in Wireless infrastructure,Body electronics & lighting,Medical. It is manufactured by Vishay and distributed by Fans, Tanssion and other distributors. SIHH11N65E-T1-GE3 can be purchased in many ways. You can place an order directly on this website, or you can call or email us. At present, We have sufficient supplies. In addition our own stock, we can also adjust the inventory to the peer distributors to meet your needs. If the supply of SIHH11N65E-T1-GE3 is insufficient, we also have other models under the Discrete Semiconductor Transistors - FETs, MOSFETs - Single category to replace it. Fans provides a 1-year warranty to customers who have purchased this part to ensure that our customers have a wonderful purchasing experience and are willing to establish a long-term relationship with Fans. So you can order SIHH11N65E-T1-GE3 from Fans with confidence. About delivery, we can deliver goods to our customers through a variety of logistics, such as DHL, FedEx, UPS, TNT and EMS or any other freight forwarder. If you want to know more about the freight, feel free to contact us for more details.

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SIHH11N65E-T1-GE3 Information

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Vishay SIHH11N65E-T1-GE3 technical specifications,attributes, parameters and parts with similar specifications to Vishay SIHH11N65E-T1-GE3.

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SIHH068N60E-T1-GE3 SIHH068N60E-T1-GE3 Vishay / Siliconix

1+: $8.22

10+: $8.1378

100+: $8.0556

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1000+: $7.8912

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100+: $7.7616

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1000+: $7.6032

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100+: $5.1156

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1000+: $5.0112

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1+: $7.06

10+: $6.9894

100+: $6.9188

500+: $6.8482

1000+: $6.7776

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100+: $6.86

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1000+: $6.72

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SIHH11N60E-T1-GE3 SIHH11N60E-T1-GE3 Vishay

1+: $1.65

10+: $1.6335

100+: $1.617

500+: $1.6005

1000+: $1.584

Body electronics & lighting

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1653 In Stock
SIHH11N60EF-T1-GE3 SIHH11N60EF-T1-GE3 Vishay / Siliconix

1+: $4.01

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100+: $3.9298

500+: $3.8897

1000+: $3.8496

Datacom module
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SIHH11N65E-T1-GE3 SIHH11N65E-T1-GE3 Vishay

1+: $2.29

10+: $2.2671

100+: $2.2442

500+: $2.2213

1000+: $2.1984

Wireless infrastructure
Body electronics & lighting
Medical

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Tanssion is one of the Distributors.
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SIHH120N60E-T1-GE3 SIHH120N60E-T1-GE3 Vishay / Siliconix

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1000+: $5.904

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The three parts on the right have similar specifications to Vishay SIHH11N65E-T1-GE3.

  • Image

    Part Number
    Manufacturer
    Series
    Package
    FET Type
    Vgs (Max)
    Technology
    FET Feature
    Part Status
    Mounting Type
    Package / Case
    Vgs(th) (Max) @ Id
    Operating Temperature
    Rds On (Max) @ Id, Vgs
    Power Dissipation (Max)
    Supplier Device Package
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Input Capacitance (Ciss) (Max) @ Vds
    Drive Voltage (Max Rds On, Min Rds On)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    View Compare
  • IRFZ20
    IRFZ20
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    100mOhm @ 10A, 10V
    40W (Tc)
    TO-220AB
    17 nC @ 10 V
    50 V
    850 pF @ 25 V
    10V
    15A (Tc)
    -
  • IRF9610
    IRF9610
    Vishay / Siliconix
    -
    Tube
    P-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    3Ohm @ 900mA, 10V
    20W (Tc)
    TO-220AB
    11 nC @ 10 V
    200 V
    170 pF @ 25 V
    10V
    1.8A (Tc)
    -
  • IRF9640
    IRF9640
    Vishay / Siliconix
    -
    Tube
    P-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    500mOhm @ 6.6A, 10V
    125W (Tc)
    TO-220AB
    44 nC @ 10 V
    200 V
    1200 pF @ 25 V
    10V
    11A (Tc)
    -
  • IRFZ24
    IRFZ24
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 175°C (TJ)
    100mOhm @ 10A, 10V
    60W (Tc)
    TO-220AB
    25 nC @ 10 V
    60 V
    640 pF @ 25 V
    10V
    17A (Tc)
    -
  • IRLD110
    IRLD110
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±10V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    4-DIP (0.300", 7.62mm)
    2V @ 250µA
    -55°C ~ 175°C (TJ)
    540mOhm @ 600mA, 5V
    1.3W (Ta)
    4-HVMDIP
    6.1 nC @ 5 V
    100 V
    250 pF @ 25 V
    4V, 5V
    1A (Ta)
    -
The three parts on the right have similar specifications to Vishay SIHH11N65E-T1-GE3
  • SIHH11N65E-T1-GE3 Price
  • SIHH11N65E-T1-GE3 Technical Data
  • SIHH11N65E-T1-GE3 PDF
  • SIHH11N65E-T1-GE3 Picture
  • SIHH11N65E-T1-GE3 Image
  • SIHH11N65E-T1-GE3 Part
  • SIHH11N65E-T1-GE3 RFQ
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  • SIHH11N65E-T1-GE3 specification

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