Mo***r Electronics : SIHH11N65E-T1-GE3 Vishay / Siliconix
SIHH11N65E-T1-GE3 Vishay / Siliconix MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8 datasheet, inventory, & pricing.
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SIHH11N65E-T1-GE3 – N-Channel 650 V 12A (Tc) 130W (Tc) Surface Mount PowerPAK® 8 x 8 from Vishay Siliconix. Pricing and Availability on millions of ...
Ar*** Electronics : SIHH11N65E-T1-GE3 by Vishay | MOSFETs
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Vi***y : SiHH11N65E E Series Power MOSFET
Mar 21, 2016 — SiHH11N65E-T1-GE3. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-Source Voltage.
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Physical. Mount, Surface Mount. Number of Pins, 8. Technical. Continuous Drain Current (ID), 12 A. Drain to Source Voltage (Vdss), 650 V.
fi***c : SIHH11N65E-T1-GE3 Datasheet(PDF) & Specifications - FindIC
Technical. Power Dissipation, 130 W. Drain to Source Voltage (Vds), 650 V. Rise Time, 28 ns. Input Capacitance (Ciss), 1257pF @100V(Vds). Fall Time, 23 ns.
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SIHH11N65E-T1-GE3. Power MOSFET, N Channel, 650 V, 12 A, 0.316 ohm, PowerPAK, Surface Mount. VISHAY SIHH11N65E-T1-GE3. Add comare
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Buy SiHH11N65E-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 650V 12A PPAK 8 X 8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, ...
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