Wo***peed : C2M0080170P 1700 V; 80 mΩ; Discrete SiC MOSFET
Wolfspeed's C2M0080170P is a 1700 V; 80 mΩ; 40 A; Gen 2; Industrial qualified; Discrete Silicon Carbide (SiC) MOSFET in a TO-247-4 Plus package.
Wo***peed : C2M0080170P Silicon Carbide MOSFET
Optimized package with separate driver source pin. • 8mm of creepage distance between drain and source. • High blocking voltage with low On-resistance.
Di***ey : C2M0080170P Wolfspeed, Inc.
C2M0080170P ; Input Capacitance (Ciss) (Max) @ Vds. 2250 pF @ 1000 V ; FET Feature. - ; Power Dissipation (Max). 277W (Tc) ; Operating Temperature. -55°C ~ 150°C ( ...
Mo***r Electronics : C2M0080170P Wolfspeed
Specifications ; Vds - Drain-Source Breakdown Voltage: 1.7 kV ; Id - Continuous Drain Current: 40 A ; Rds On - Drain-Source Resistance: 80 mOhms ; Vgs - Gate-Source ...
Oc***art : Wolfspeed C2M0080170P - MOSFETs
Wolfspeed C2M0080170P ; Continuous Drain Current (ID), 40 A ; Current Rating, 40 A ; Drain to Source Breakdown Voltage, 1.7 kV ; Drain to Source Resistance, 80 mΩ.
Da***heetsPDF : C2M0080170P Datasheet, Equivalent, Power MOSFET.
VDS 1700 V C2M0080170P ID @ 25˚C 40 A Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS(on) 80 mΩ N-Channel Enhancement Mode Features Package • ...
Ar*** Electronics : WOLFSPEED, INC C2M0080170P MOSFETs
Buy C2M0080170P with fast, free shipping on qualifying orders. View datasheets, stock and pricing, or find other MOSFETs.
AL***TASHEET : C2M0080170P Datasheet(PDF) - Cree, Inc
Silicon Carbide Power MOSFET C2M MOSFET Technology, C2M0080170P Datasheet, C2M0080170P circuit, C2M0080170P data sheet : CREE, alldatasheet, Datasheet, ...
AL***TASHEET : C2M0080170P Marking, PDF
Manufacturer, Marking, Part No. Package, Datasheet, Description. Cree, Inc, C2M0080170P · C2M0080170P, TO-247-4, CREE-C2M0080170P Datasheet Marking