Li***lfuse : IXYP10N65C3D1
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current ...
Mo***r Electronics : IXYP10N65C3D1 IXYS
IXYP10N65C3D1 IXYS IGBT Transistors Disc IGBT XPT-GenX3 TO-220AB/FP datasheet, inventory, & pricing.
TM*** : IXYP10N65C3D1 IXYS - Transistor: IGBT | GenX3™; 650V
Specification ; Power dissipation. 160W ; Case. TO220-3 ; Gate-emitter voltage. ±20V ; Pulsed collector current. 54A ; Mounting. THT.
Da***heetsPDF : IXYP10N65C3D1 Datasheet | IXYS
Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/Diode IXYP10N65C3D1 Extreme Light Punch Through IGBT for 20-60kHz Switching VCES = 650V IC110 = 10A ...
Da***heetsPDF : IXYP10N65C3D1 IGBT Datasheet pdf
Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/Diode IXYP10N65C3D1 Extreme Light Punch Through IGBT for 20-60kHz Switching VCES = 650V IC110 = 10A ...
AL***TASHEET : IXYP10N65C3D1 Datasheet(PDF) - IXYS Corporation
Optimized for 20-60kHz Switching, IXYP10N65C3D1 Datasheet, IXYP10N65C3D1 circuit, IXYP10N65C3D1 data sheet : IXYS, alldatasheet, Datasheet, Datasheet search ...
Al***ransistors. Datasheet : IXYP10N65C3D1 IGBT. Datasheet pdf - Equivalent
IXYP10N65C3D1 IGBT. Datasheet pdf. Equivalent. Type Designator: IXYP10N65C3D1. Type of IGBT Channel: N-Channel. Maximum Power Dissipation (Pc), W: 160.
te*** : Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3 | ...
Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3. Multiples: 0 Minimum quantity: 0 Product code: IXYP10N65C3D1 Manufacturer: IXYS