Mo***r Electronics : IXYH120N65C3 IXYS
Specifications ; Maximum Gate Emitter Voltage: - 20 V, 20 V ; Continuous Collector Current at 25 C: 260 A ; Pd - Power Dissipation: 1.36 kW ; Minimum Operating ...
Li***lfuse : IXYH120N65C3
Find information for part IXYH120N65C3 from the Planar Series XPT, or search for Power Semiconductors and more Discrete IGBTs from Littelfuse.
Li***lfuse : XPTTM 650V IGBT GenX3TM IXYH120N65C3
Symbol. Test Conditions. Maximum Ratings. VCES. TJ. = 25°C to 175°C. 650. V. VCGR. TJ. = 25°C to 175°C, RGE = 1M . 650. V. VGES. Continuous.
Da***heetsPDF : IXYH120N65C3 Datasheet | IXYS
Advance Technical Information XPTTM 650V IGBT GenX3TM Extreme Light Punch Through IGBT for 20-60kHz Switching IXYH120N65C3 VCES = 650V IC110 = 120A VCE(sat) ...
AL***TASHEET : IXYH120N65C3 Datasheet(PDF) - IXYS Corporation
Part No. IXYH120N65C3. Download, IXYH120N65C3 Click to view. File Size, 231.49 Kbytes. Page, 6 Pages. Manufacturer, IXYS [IXYS Corporation].
Al***ransistors. Datasheet : IXYH120N65C3 IGBT. Datasheet pdf - Equivalent
IXYH120N65C3 IGBT. Datasheet pdf. Equivalent. Type Designator: IXYH120N65C3. Type of IGBT Channel: N-Channel. Maximum Power Dissipation (Pc), W: 1361.
da***heet-pdf : IXYH120N65C3 Datasheet PDF
Part Number, IXYH120N65C3 ; Description, IGBT ; Info, Advance Technical Information XPTTM 650V IGBT Gen. ; Manufacture, IXYS ; for PC, Download IXYH120N65C3 ...
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