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The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for ...
Da***heetsPDF : IXTQ50N25T Datasheet, Equivalent, Power MOSFET.
Trench Gate Power MOSFET IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T N-Channel Enhancement Mode VDSS = ID25 = RDS(on) ≤ 250V 50A 60mΩ TO-263 AA (IXTA) TO-220AB ...
Al***ransistors. Datasheet : IXTQ50N25T MOSFET. Datasheet pdf. Equivalent
Equivalent. Type Designator: IXTQ50N25T. Type of Transistor: MOSFET. Type of Control Channel: N -Channel. Maximum Power Dissipation (Pd): 400 W.
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LC*** : IXTQ50N25T IXYS | C426680 - LCSC Electronics
36040 products — IXTQ50N25T IXYS US$2.2019 - 250V 50A 400W 60mΩ@10V,25A N Channel TO-3P-3 MOSFETs ROHS datasheet, price, inventory C426680.
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Order today, ships today. IXTQ50N25T – N-Channel 250 V 50A (Tc) 400W (Tc) Through Hole TO-3P from IXYS. Pricing and Availability on millions of electronic ...
AL***TASHEET : IXTQ50N25T Datasheet(PDF) - IXYS Corporation
Trench Gate Power MOSFET N-Channel Enhancement Mode. Features Avalanche Rated High Current Handling Capability Fast Intrinsic Rectifier Low RDS(on).
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20PCS IXTQ50N25T TO-3P IXTQ50N25 TO-247 50N25 MOSFET 50Amps 250V new original. 1/1. 0. US $17.65/ lot. US $21.5218% off. (20 Pieces). Price shown before tax ...
TT*** : IXTQ50N25T - IXYS Part Detail
IXTQ50N25T ; Pd - Power Dissipation, 400 W ; Product Type, MOSFET ; Qg - Gate Charge, 78 nC ; Rds On - Drain-Source Resistance, 60 mOhms ; Rise Time, 25 ns.
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