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Li***lfuse : IXTL2N470
2016 IXYS CORPORATION, All Rights Reserved. DS100759(11/16). High Voltage. Power MOSFET. N-Channel Enhancement Mode. IXTL2N470. Symbol. Test Conditions.
Li***lfuse : IXTL2N470
The Very High Voltage series of N-Channel Standard MOSFETs are specifically designed to address demanding, fast-switching power conversion applications ...
Mo***r Electronics : IXTL2N470 IXYS
IXTL2N470 IXYS MOSFET MSFT N-CH STD-VERY HI VOLTAGE datasheet, inventory, & pricing. ... Build or request PCB Symbol, Footprint or Model for IXTL2N470.
Di***ey : IXTL2N470 IXYS | Discrete Semiconductor Products
IXTL2N470 ; Input Capacitance (Ciss) (Max) @ Vds. 6860 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 220W (Tc) ; Operating Temperature. -55°C ~ 150°C (TJ).
AL***TASHEET : IXTL2N470 Datasheet(PDF) - IXYS Corporation
Part No. IXTL2N470. Download, IXTL2N470 Click to view. File Size, 157.5 Kbytes. Page, 5 Pages. Manufacturer, IXYS [IXYS Corporation].
Tr***fer Multisort Elektronik : IXTL2N470 IXYS - Transistor: N-MOSFET | unipolar; 4.7kV
Specification ; Type of transistor. N-MOSFET ; Polarisation. unipolar ; Drain-source voltage. 4.7kV ; Drain current. 2A ; Power dissipation. 220W.
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