Li***lfuse : IXTA26P10T - Trench Gate
Find information for part IXTA26P10T from the Trench Gate Series P Channel, or search for Power Semiconductors and more Discrete MOSFETs from Littelfuse.
Di***ey : IXTA26P10T IXYS | Discrete Semiconductor Products
Order today, ships today. IXTA26P10T – P-Channel 100 V 26A (Tc) 150W (Tc) Surface Mount TO-263AA from IXYS. Pricing and Availability on millions of ...
Mo***r Electronics : IXTA26P10T IXYS
Specifications ; Maximum Operating Temperature: + 150 C ; Pd - Power Dissipation: 150 W ; Channel Mode: Enhancement ; Series: IXTA26P10.
Mo***r Electronics : IXTY26P10T IXTA26P10T IXTP26P10T
Symbol. Test Conditions. Maximum Ratings. VDSS. TJ. = 25°C to 150°C. -100. V. VDGR. TJ. = 25°C to 150°C, RGS = 1MΩ. -100. V. VGSS. Continuous.
TM*** : IXTA26P10T IXYS - Transistor: P-MOSFET | TrenchP - TME
Specification ; On-state resistance. 90mΩ ; Mounting. SMD ; Gate charge. 52nC ; Kind of package. tube ; Kind of channel. enhanced.
Da***heetsPDF : IXTA26P10T Datasheet, Equivalent, P-Channel MOSFET.
INCHANGE IXTA26P10T | MOSFET. isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤90mΩ ·Enhance.
Da***heetsPDF : IXTA26P10T Datasheet, Equivalent, Power MOSFET.
IXYS IXTA26P10T | MOSFET. TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTY26P10T IXTA26P10T IXTP26P10T .
Ut*** : IXYS IXTA26P10T - Transistors - FETs, MOSFETs - Single
IXTA26P10T datasheet PDF download, IXYS Transistors - FETs, MOSFETs - Single IXTA26P10T Specifications: MOSFET P-CH 100V 26A TO-263.
Al***ransistors. Datasheet : IXTA26P10T MOSFET. Datasheet pdf. Equivalent
Equivalent. Type Designator: IXTA26P10T. Type of Transistor: MOSFET. Type of Control Channel: P -Channel. Maximum Power Dissipation (Pd): 150 W.