Li***lfuse : IXTA1R6N100D2HV
IXTA1R6N100D2HV. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Symbol. Test Conditions. Characteristic Values.
Li***lfuse : IXTA1R6N100D2HV
Find information for part IXTA1R6N100D2HV from the D2 Series N Channel Depletion Mode, or search for Power Semiconductors and more Discrete MOSFETs from ...
Mo***r Electronics : IXTA1R6N100D2HV IXYS
Specifications ; Vds - Drain-Source Breakdown Voltage: 1 kV ; Id - Continuous Drain Current: 1.6 A ; Rds On - Drain-Source Resistance: 10 Ohms ; Vgs - Gate-Source ...
Di***ey : IXTA1R6N100D2HV - Discrete Semiconductor Products
Order today, ships today. IXTA1R6N100D2HV – N-Channel 1000 V 1.6A (Tj) 100W (Tc) Surface Mount TO-263HV from IXYS. Pricing and Availability on millions of ...
ev***thing PE : IXTA1R6N100D2HV - Littelfuse | MOSFET
The IXTA1R6N100D2HV from Littelfuse is a MOSFET with Continous Drain Current 1.6 A, Drain Source Resistance 10 Milliohm, Drain Source Breakdown Voltage 1000 ...
TM*** : IXTA1R6N100D2HV IXYS - Transistor: N-MOSFET | Polar
IXYS IXTA1R6N100D2HV | Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263 - This product is available in Transfer Multisort Elektronik.
Ne***k Electronics : IXTA1R6N100D2HV - Littelfuse - MOSFET, 1.6A, 1KV
Buy IXTA1R6N100D2HV - Littelfuse - MOSFET, 1.6A, 1KV, 100W, TO-263HV ROHS: YES. Newark México offers fast quotes, same day shipping, fast delivery ...
AL***TASHEET : IXTA1R6N100D2HV Datasheet(PDF) - IXYS Corporation
High Voltage Depletion Mode MOSFET, IXTA1R6N100D2HV Datasheet, IXTA1R6N100D2HV circuit, IXTA1R6N100D2HV data sheet : IXYS, alldatasheet, Datasheet, ...
el***nt14 : IXTA1R6N100D2HV - Littelfuse - Power MOSFET, N ...
N-channel high voltage depletion mode power MOSFET suitable for use in audio amplifiers, start-up circuits, protection circuits, Ramp generators, current ...