Mo***r Electronics : IXTA160N10T7 IXYS
IXTA160N10T7 IXYS MOSFET 160 Amps 100V 6.9 Rds datasheet, inventory, & pricing. ... Build or request PCB Symbol, Footprint or Model for IXTA160N10T7.
Di***ey : IXTA160N10T7 IXYS | Discrete Semiconductor Products
Order today, ships today. IXTA160N10T7 – N-Channel 100 V 160A (Tc) 430W (Tc) Surface Mount TO-263-7 (IXTA) from IXYS. Pricing and Availability on millions ...
Li***lfuse : IXTA160N10T7
Find information for part IXTA160N10T7 from the Gen1 Series N Channel Trench Gate, or search for Power Semiconductors and more Discrete MOSFETs from ...
Li***lfuse : TrenchMVTM Power MOSFET
IXTA160N10T7. Symbol. Test Conditions. Characteristic Values. (TJ = 25°C unless otherwise specified). Min. Typ. Max. gfs. VDS= 10 V; ID = 60 A, Note 1.
TT***urope : IXTA160N10T7 - IXYS Part Detail
IXTA160N10T7 ; Height, 4.7 mm ; Channel Mode, Enhancement ; Configuration, Single ; Fall Time, 42 ns ; Id - Continuous Drain Current, 160 A.
Al***ransistors. Datasheet : IXTA160N10T7 MOSFET. Datasheet pdf. Equivalent
Equivalent. Type Designator: IXTA160N10T7. Type of Transistor: MOSFET. Type of Control Channel: N -Channel. Maximum Power Dissipation (Pd): 430 W.
Da***heetsPDF : IXTA160N10T7 Datasheet | IXYS Corporation
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA160N10T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 100 160 7.0 V A mΩ ...
SI***OCK : IXTA160N10T7 TO-263-7 MOSFET N-CH 100V 160A TO-263-7
IXTA160N10T7 TO-263-7 MOSFET N-CH 100V 160A TO-263-7 ; Drain to Source Voltage (Vdss), 100V ; Current - Continuous Drain (Id) @ 25 C · 160A ; Rds On (Max) @ Id Vgs ...
AR*** : IXTA160N10T7 ➡️ IXYS | ARCEL Power electronics
MOSFET Transistor IXTA160N10T7 - ARCEL assists you in developing your projects in Power Electronics.