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SUG90090E-GE3. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-source voltage.
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SUG90090E-GE3 ; Pd - Power Dissipation, 395 W ; Product Type, MOSFET ; Qg - Gate Charge, 129 nC ; Rds On - Drain-Source Resistance, 7.9 mOhms ; Rise Time, 44 ns.
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SUG90090E SUG90090E-GE3 N-Channel 200v 175°C MOSFET Vishay TO-247 New original. gro-upon-3 100% Positive feedback. gro-upon-3 (39); 100% positive feedback.