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SiHP065N60E-BE3 a. SiHP065N60E-GE3. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-source voltage.
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Vishay / Siliconix SiHP065N60E 600V E Series Power MOSFET is designed to withstand overvoltage transients in the avalanche mode with guaranteed limits through ...
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Manufacturer Part #. SIHP065N60E-GE3. SiHP065N60E 600 V 57 mOhm 98 NC N-Channel E Series Power Mosfet - TO-220AB. SIHP065N60E-GE3 Datasheet. ECAD Model:.
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SIHP065N60E-GE3 ; Transistor Type, 1 N-Channel ; Typical Turn-Off Delay Time, 54 ns ; Vds - Drain-Source Breakdown Voltage, 600 V ; Vgs th - Gate-Source Threshold ...
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N-Channel MOSFET, 40 A, 600 V, 3-Pin TO-220AB Vishay SIHP065N60E-GE3 ; 5 - 9, R 143.60 ; 10 - 19, R 139.29 ; 20 +, R 133.72 ; Packaging Options: Standard Pack.
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