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Fu***e Electronics : SI4431CDY-T1-GE3 - Vishay
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Di***ey : SI3932DV-T1-GE3 Vishay Siliconix
Order today, ships today. SI3932DV-T1-GE3 – Mosfet Array 30V 3.7A 1.4W Surface Mount 6-TSOP from Vishay Siliconix. Pricing and Availability on millions of ...
Vi***y : Si3932DV Dual N-Channel 30 V (D-S) MOSFET
Mar 22, 2010 — Si3932DV-T1-GE3. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-source voltage.
Mo***r Electronics : SI3932DV-T1-GE3 Vishay Semiconductors
Vishay / Siliconix Si3 TrenchFET Power MOSFETs operate in an enhancement mode and offer ultra-low RDS(ON) for high efficiency. The series incorporates Si ...
Oc***art : SI3932DV-T1-GE3 - Vishay
SI3932DV-T1-GE3 ; Max Operating Temperature, 150 °C ; Max Power Dissipation, 1.4 W ; Min Operating Temperature, -55 °C ; Nominal Vgs, 1.2 V ; Number of Channels, 2.
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Ne***k Electronics : SI3932DV-T1-GE3 - Vishay - Dual MOSFET, N Channel, 30 V
Buy SI3932DV-T1-GE3 - Vishay - Dual MOSFET, N Channel, 30 V, 30 V, 3.7 A, 3.7 A, 0.047 ohm. Newark offers fast quotes, same day shipping, fast delivery, ...
TT*** : SI3932DV-T1-GE3 - Vishay Semiconductors Part Detail
SI3932DV-T1-GE3 ; Pd - Power Dissipation, 1.4 W ; Product Type, MOSFET ; Qg - Gate Charge, 6 nC ; Rds On - Drain-Source Resistance, 58 mOhms ; Rise Time, 15 ns.
WI***OURCE : SI3932DV-T1-GE3 Vishay – Price, Stock & Datasheet
The Vishay SI3932DV-T1-GE3 is a 2 N-Channel (Dual) FET with a logic level gate, designed for use in discrete semiconductor products.
LC*** : Vishay Intertech SI3932DV-T1-GE3 - C145237
37064 products — Vishay Intertech SI3932DV-T1-GE3 ; Description: 30V 3.7A 58mΩ@10V,3.4A 1.4W 2 N-Channel TSOP-6-1.5mm MOSFETs ROHS ; Drain Source Voltage (Vdss), 30V.
OE***rade : si3932dv-t1-ge3 Price and Inventory by Distributor
Vishay Intertechnologies, Transistor MOSFET Array Dual N-CH 30V 3.7A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3932DV-T1-GE3). RoHS:.comliant. Min Qty: 3000.