Di***ey : SI2337DS-T1-E3 Vishay Siliconix - Digikey
Order today, ships today. SI2337DS-T1-E3 – P-Channel 80 V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236) from Vishay Siliconix.
Vi***y : Si2337DS P-Channel 80 V (D-S) MOSFET
Si2337DS-T1-E3. Lead (Pb)-free and halogen-free. Si2337DS-T1-GE3. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted). PARAMETER.
Mo***r Electronics : SI2337DS-T1-E3 Vishay Semiconductors | Mouser
SI2337DS-T1-E3 Vishay Semiconductors MOSFET -80V Vds 20V Vgs SOT-23 datasheet, inventory, & pricing.
Oc***art : SI2337DS-T1-E3 - Vishay
Physical. Case/Package, SOT-23-3. Mount, Surface Mount. Number of Pins, 3. Weight, 1.437803 g. Technical. Continuous Drain Current (ID), -2.2 A.
TT*** : SI2337DS-T1-E3 - Vishay Semiconductors Part Detail
SI2337DS-T1-E3 ; Product Type, MOSFET ; Qg - Gate Charge, 17 nC ; Rds On - Drain-Source Resistance, 270 mOhms ; Rise Time, 15 ns ; Series, SI2.
Ar*** Electronics : SI2337DS-T1-E3 by Vishay | MOSFETs
Buy SI2337DS-T1-E3 with fast, free shipping on qualifying orders. View datasheets, stock and pricing, or find other MOSFETs.
Ne***k Electronics : SI2337DS-T1-E3 - Vishay - Power MOSFET, P Channel ...
The SI2337DS-T1-E3 is a 80VDS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode. -55 to 150°C Operating temperature range. Applications.
RS***line : Siliconix / Vishay - SI2337DS-T1-E3
Siliconix / Vishay SI2337DS-T1-E3 ; Dimensions. 3.04 x 1.4 x 1.02 mm ; Drain Current. -0.96 A ; Drain to Source On Resistance. 0.303 Ohms ; Drain to Source Voltage.
TM*** : SI2337DS-T1-E3 VISHAY - Transistor: P-MOSFET | unipolar
SI2337DS-T1-E3VISHAY ; Type of transistor. P-MOSFET ; Polarisation. unipolar ; Drain-source voltage. -80V ; Drain current. -2.2A ; Pulsed drain current. -7A.
Fa***ll : SI2337DS-T1-E3 - Vishay - Power MOSFET, P Channel, 80 V
The SI2337DS-T1-E3 is a 80VDS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode. -55 to 150°C Operating temperature range. Applications.