Vi***y : IRFB18N50K Power MOSFET
17. A. TC = 100 °C. 11. Pulsed drain current a. IDM. 68. Linear derating factor. 8 W/°C. Single pulse avalanche energy b.
Vi***y : IRFB18N50K - Product information
Low gate charge Qg results in simple drive requirement. Improved gate, avalanche, and dynamic dV/dt ruggedness. Fully characterized capacitance and ...
Mo***r Electronics : IRFB18N50K Datasheet - Vishay / Siliconix
IRFB18N50K Vishay / Siliconix MOSFET R ALT 844-IRFB18N50KPBF datasheet, inventory, & pricing.
In***eon Technologies : IRFB18N50K
Oct 19, 2004 — IRFB18N50K. 2 irf Dynamic @ TJ = 25°C (unless otherwise specified). Symbol. Parameter. Min. Typ. Max. Units. Conditions. V(BR)DSS.
Al***ransistors. Datasheet : IRFB18N50K MOSFET. Datasheet pdf. Equivalent
Equivalent. Type Designator: IRFB18N50K. Type of Transistor: MOSFET. Type of Control Channel: N -Channel. Maximum Power Dissipation (Pd): 220 W.
Fa***ll : Power MOSFET IRFB18N50K, SiHFB18N50K
Jan 19, 2009 — 17. A. TC = 100 °C. 11. Pulsed Drain Currenta. IDM. 68. Linear Derating Factor. 8 W/°C. Single Pulse Avalanche Energyb.
Da***heetsPDF : IRFB18N50K Datasheet, Equivalent, Power MOSFET.
International Rectifier IRFB18N50K | MOSFET. PD - 93926B IRFB18N50K SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible.
AL***TASHEET : IRFB18N50K Datasheet(PDF) - International Rectifier
IRFB18N50K Product details · 1. Switch Mode Power Supply (SMPS) · 2. Uninterruptible Power Supply · 3. High Speed Power Switching · 4. Hard Switched and High ...
Di***Key : IRFB18N50K Vishay Siliconix
IRFB18N50K ; Input Capacitance (Ciss) (Max) @ Vds. 2830 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 220W (Tc) ; Operating Temperature. -55°C ~ 150°C (TJ).