Di***ey : TPN1600ANH,L1Q Toshiba Semiconductor and Storage
TPN1600ANH,L1Q – N-Channel 100 V 17A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (1x3) from Toshiba Semiconductor and Storage.
Mo***r Electronics : TPN1600ANH,L1Q Toshiba
Specifications ; Vds - Drain-Source Breakdown Voltage: 100 V ; Id - Continuous Drain Current: 36 A ; Rds On - Drain-Source Resistance: 13 mOhms ; Vgs - Gate-Source ...
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se***on-storage : TPN1600ANH | 12V - 300V MOSFETs | Asia-English
TPN1600ANH, N-ch MOSFET, 100 V, 0.016 Ω@10V, TSON Advance, U-MOSⅧ-H|Find ... TPN1600ANH Data sheet/Japanese[Oct,2019] PDF: 378KB ... TPN1600ANH,L1Q, 5000.
Ar*** Electronics : TPN1600ANH,L1Q by Toshiba | MOSFETs
Home · Categories · Diodes, Transistors and Thyristors · FET Transistors · MOSFETs; TPN1600ANH,L1Q - Toshiba. ArrowDivisions.
TM*** : TPN1600ANH,L1Q(M TOSHIBA - Transistor: N-MOSFET
TPN1600ANH,L1Q(MTOSHIBA ; Type of transistor. N-MOSFET ; Polarisation. unipolar ; Drain-source voltage. 100V ; Drain current. 36A ; Pulsed drain current. 80A.
TT*** : TPN1600ANH,L1Q - Toshiba Part Detail
TPN1600ANH,L1Q Toshiba MOSFET TRANS POWER MOSFET datasheets, pricing, and inventory.
So***engine : TPN1600ANH,L1Q by Toshiba Corporation
Description. Small Signal Field-Effect Transistor, 36A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ; Includes · Scheduled shipping up ...
gl***hop : TPN1600ANH
Feb 18, 2014 — TPN1600ANH. 1. MOSFETs Silicon N-channel MOS (U-MOS -H). TPN1600ANH. Start of production. 2012-08. 1. Applications.
Fa***ll : Toshiba TPN1600ANH,L1Q(M - Power MOSFET, N ...
TOSHIBA TPN1600ANH,L1Q(M. Power MOSFET, N Channel, 100 V, 17 A, 0.013 ohm, TSON, Surface Mount ...