Di***ey : TK9J90E,S1E Toshiba Semiconductor and Storage
Order today, ships today. TK9J90E,S1E – N-Channel 900 V 9A (Ta) 250W (Tc) Through Hole TO-3P(N) from Toshiba Semiconductor and Storage.
Mo***r Electronics : TK9J90E,S1E Toshiba
TK9J90E,S1E Toshiba MOSFET PLN MOS 900V 1300m (VGS=10V) TO-3PN datasheet, inventory, & pricing.
se***on-storage : TK9J90E | 400V - 900V MOSFETs | Americas – United States
TK9J90E. Power MOSFET (N-ch 700V
Ar*** Electronics : Toshiba TK9J90E,S1E MOSFETs
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Ar*** Electronics : Toshiba TK9J90E,S1E(S MOSFETs
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TM*** : TK9J90E,S1E(S TOSHIBA - Transistor: N-MOSFET | unipolar
TK9J90E,S1E(STOSHIBA ; Drain current. 9A ; Power dissipation. 250W ; Case. TO3PN ; Gate-source voltage. ±30V ; On-state resistance. 1.3Ω.
Av*** : TK9J90E,S1E by Toshiba Single MOSFETs
TK9J90E,S1E ; Channel Type, N ; Continuous Drain Current Id, 9 ; Drain Source On State Resistance, 1.3@10V ; Drain Source Voltage Vds, 900 ; No. of Pins, 3.
Al***bout Circuits : TK9J90E,S1E(S Toshiba - Datasheet PDF & Technical Specs
Technical Specifications ; Fall Time, 35 ns ; Gate to Source Voltage (Vgs), 30 V ; Max Operating Temperature, 150 °C ; Min Operating Temperature, -55 °C ; Number of ...
Oc***art : TK9J90E,S1E Toshiba - MOSFETs - Distributors and Price ...
Physical. Mount, Through Hole. Weight, 6.961991 g. Technical. Continuous Drain Current (ID), 9 A. Drain to Source Breakdown Voltage, 900 V.
Al***press : TK9J90E,S1E MOSFET N-CH 900V TO-3PN ...
TK9J90E,S1E MOSFET N-CH 900V TO-3PN TK9J90E 9J90 TK9J90 3pcs. Delivery. Shipping: US $43 From China to Canada via EMS. Estimated delivery on Jul 21.