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RN1911,LF(CT Toshiba Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=10kOhm, Q1BER=Inf, Q2BSR=10kOhm, Q2BER=Inf, VCEO=50V, IC=0.1A datasheet, ...
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RN1911,LF(CT – Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount US6 from Toshiba Semiconductor and Storage ...
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(RN1911,LF(CT) Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=10kOhm, Q1BER=Inf, Q2BSR=10kOhm, Q2BER=Inf, VCEO=50V, IC=1A
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RN1911,LF(CT ; 평균발송일. 24시간이내 발송 ; 주요사양. 트랜지스터 유형: 2 NPN - 사전 바이어싱됨(이중). 전압 - 콜렉터 방출기 항복(최대): 50V. 전류 - 콜렉터(Ic)( ...