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AEC−Q101 Qualified and PPAP Capable. • Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A. • Maximum Junction Temperature: TJ = 175°C.
Di***ey : FGY160T65SPD-F085 - Discrete Semiconductor Products
FGY160T65SPD-F085 ; Current - Collector Pulsed (Icm). 480 A ; Vce(on) (Max) @ Vge, Ic. 2.05V @ 15V, 160A ; Power - Max. 882 W ; Switching Energy. 12.4mJ (on), 5.7mJ ...
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FGY160T65SPD-F085 onsemi / Fairchild IGBT Transistors 650V Field Stop Gen3 Trench IGBT datasheet, inventory, & pricing.
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IGBT, SINGLE, N-CH, 650V, 240A, TO-247-3; DC Collector Current: 240A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 882W; ...
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onsemiFGY160T65SPD-F085IGBT Chip. Trans IGBT Chip N-CH 650V 240A 882W Automotive 3-Pin(3+Tab) TO-247 Tube. Download Datasheet. Symbols and Footprints.
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Manufacturer Part No. FGY160T65SPD-F085. Manufacturer: ONSEMI. Order Code: 2610672. Continuous Collector Current: 240A. Collector Emitter Saturation Voltage ...
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The FGY160T65SPD-F085 is mainly suitable for application fields in which there is a need for high efficiency, low noise and low EMI emission. In particular, ...
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