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fn1016,fp1016
***ケン電気 : 2SB1587
Conditions. VCB=–160V. VEB=–5V. IC=–30mA. VCE=–4V, IC=–6A. IC=–6A, IB=–6mA. IC=–6A, IB=–6mA. VCE=–12V, IE=1A. VCB=–10V, f=1MHz. (Ta=25°C). (Ta=25°C).
Da***heetsPDF : 2SB1587 Datasheet, Equivalent, POWER TRANSISTOR.
DataSheet4U Specification Silicon PNP Darlington Power Transistors 2SB1587 DESCRIPTION ·With TO-3PML package .comlement to type 2SD2438 ...
Pe***e also ask : What is the equivalent of 2SA1015?
Replacements for the 2SA1015-Y If you need to repair an existing system that uses the 2SA1015-Y with a replacement, one option is the 2SC1815, also originally produced by Toshiba.
Al***ransistors. Datasheet : 2SB1587 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB1587. SMD Transistor Code: FP1016. Material of Transistor: Si. Polarity: PNP. Maximum Collector Power Dissipation (Pc): 75 W.
Ar*** Electronics : 2SB1587 by Sanken Electric Co., Ltd | Darlington BJT
Home · Categories · Diodes, Transistors and Thyristors · Bipolar Transistors · Darlington BJT; 2SB1587 - Sanken Electric Co., Ltd. ArrowDivisions.
Di***ey : 2SB1587 Sanken | Discrete Semiconductor Products
2SB1587 – Bipolar (BJT) Transistor PNP - Darlington 150 V 8 A 65MHz 75 W Through Hole TO-3PF from Sanken. Pricing and Availability on millions of electronic ...
AL***TASHEET : 2SB1587 Datasheet(PDF) - Sanken electric
Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose), 2SB1587 Datasheet, 2SB1587 circuit, 2SB1587 data sheet : SANKEN, ...
AL***TASHEET : 2SB1587 Datasheet(PDF) - New Jersey Semi-Conductor ...
DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) • High DC Current Gain- : hFE= 5000( Min.) @(IC= -6A, VCE=- 4V)
TM*** : 2SB1587 - Transistor: PNP | bipolar; Darlington - TME
Specification ; Type of transistor. PNP ; Polarisation. bipolar ; Kind of transistor. Darlington ; Collector-emitter voltage. 150V ; Collector current. 10A.
Ne***ersey Semiconductor : Parts | 2SB1587
2SB1587 Darlington BJT. default part image. Datasheet: View. Stock. 7412 NEW JERSEY SEMICONDUCTOR. Trans Darlington PNP 150V 8A 3-Pin(3+Tab) TO-3PF.
Ne***ersey Semiconductor : ^mi-dondu^ 2SB1587
2SB1587. DESCRIPTION. • Collector-Emitter Breakdown Voltage-. :V(BR)CEo=-150V(Min). • High DC Current Gain-. : hFE= 5000( Min.) @(|c= -6A, VCE=- 4V).