Mo***r Electronics : IRG4BC10KDPBF Infineon Technologies
IRG4BC10KDPBF Infineon Technologies IGBT Transistors 600V UltraFast 8-25kHz datasheet, inventory, & pricing.
mi***-semiconductor : IRG4BC10KDPbF - Micro-Semiconductor
Dec 23, 2003 — Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m). IRG4BC10KDPbF. INSULATED GATE BIPOLAR TRANSISTOR WITH. ULTRAFAST SOFT RECOVERY DIODE.
Di***ey : irg4bc10kdpbf - Discrete Semiconductor Products
Order today, ships today. IRG4BC10KDPBF – IGBT 600 V 9 A 38 W Through Hole TO-220AB from Infineon Technologies. Pricing and Availability on millions of ...
AL***TASHEET : IRG4BC10KDPBF Datasheet(PDF) - International Rectifier
Short Circuit Rated UltraFast IGBT. Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V
Oc***art : IRG4BC10KDPBF Infineon - IGBTs - Distributors, Price ...
Find the best pricing for Infineon IRG4BC10KDPBF by bulk discounts from 5 distributors. Octopart is the world's source for IRG4BC10KDPBF ...
Da***heetsPDF : IRG4BC10KDPBF Datasheet | International Rectifier
IRG4BC10KDPBF MOSFET Datasheet PDF ; HEXFET Power MOSFET · PD -94903 IRG4BC10KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C ...
WI***OURCE : IRG4BC10KDPBF Infineon Technologies
The Infineon Technologies IRG4BC10KDPBF is an IGBT type with a maximum collector-emitter breakdown voltage of 600V. It has a maximum power dissipation of 38W ...
Di***ip : irg4bc10kdpbf - Insulated GATE Bipolar Transistor - Digchip
Pulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot. Repetitive rating; pulse width limited by maximum. Duty cycle: = 125°C Tsink = 90°C Gate ...
Da***heetQ : IRG4BC10KDPBF Datasheet PDF - International Rectifier
Short Circuit Rated UltraFast IGBT. Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V