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IPD50N04S308ATMA1 ; Power Dissipation (Max). 68W (Tc) ; Operating Temperature. -55°C ~ 175°C (TJ) ; Mounting Type. Surface Mount ; Supplier Device Package. PG-TO252 ...
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Order today, ships today. IPD50N04S308ATMA1 – N-Channel 40 V 50A (Tc) 68W (Tc) Surface Mount PG-TO252-3 from International Rectifier.
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IPD50N04S308ATMA1 Infineon Technologies MOSFET MOSFET_(20V 40V) datasheet, inventory, & pricing.
In***eon Technologies : OptiMOS®-T Power-Transistor
May 3, 2007 — 3 Safe operating area. 4 Max. transient thermal impedance. I D = f(V DS); T C = 25 °C; D = 0. Z thJC = f(t p) parameter: t p.
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Ar*** Electronics : IPD50N04S308ATMA1 by Infineon Technologies AG | MOSFETs
Home · Categories · Diodes, Transistors and Thyristors · FET Transistors · MOSFETs; IPD50N04S308ATMA1 - Infineon Technologies AG. ArrowDivisions.
Oc***art : IPD50N04S308ATMA1 Infineon | Distributors, Price, ...
Infineon IPD50N04S308ATMA1 ; Case/Package, TO-252-3 ; Mount, Surface Mount ; Technical. Continuous Drain Current (ID), 50 A. Drain to Source Voltage (Vdss), 40 V.
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N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260°C peak reflow; 175°C operating temperature; Green package (RoHS) ...
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Pack of 10 IPD50N04S308ATMA1 Trans MOSFET N-CH 40V 50A Automotive 3-Pin(2+Tab), RoHS, Cut Tape ; Features & details · 2 Year Warranty ; Product Dimensions, 2 x 4 ...