On***i : FQA10N80C-F109
MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Thermal Characteristics. Symbol. Parameter. FQA10N80C-F109. Unit. VDSS. Drain to Source Voltage.
On***i : FQA10N80C-F109 - MOSFETs
This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been ...
Di***ey : FQA10N80C-F109 - Discrete Semiconductor Products
Order today, ships today. FQA10N80C-F109 – N-Channel 800 V 10A (Tc) 240W (Tc) Through Hole TO-3P from onsemi. Pricing and Availability on millions of ...
Mo***r Electronics : FQA10N80C-F109 onsemi / Fairchild
FQA10N80C-F109 onsemi / Fairchild MOSFET 800V N-Ch QFET Advance datasheet, inventory, & pricing.
Ro***ster Electronics : Part FQA10N80C-F109
Part Number, FQA10N80C-F109. Description, Power Field-Effect Transistor, 10A, 800V, 1.1ohm, N-Channel, MOSFET. RoHS, YES. Lifecycle Status, EOL/LTB.
Oc***art : FQA10N80C-F109 onsemi | Distributors, Price, and ...
onsemi FQA10N80C-F109 ; Number of Pins, 3 ; Weight, 6.401 g ; Technical. Continuous Drain Current (ID), 10 A. Drain to Source Breakdown Voltage, 800 V · Drain to ...
el***nt14 : FQA10N80C-F109 - Onsemi - Power MOSFET, N Channel, ...
The FQA10N80C_F109 is a N-channel QFET® enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been ...
el***nt14 : FQA10N80C-F109 - Onsemi - Power MOSFET, N Channel ...
The FQA10N80C_F109 is a N-channel QFET® enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been ...
AL***TASHEET : FQA10N80C-F109 Datasheet(PDF) - ALLDATASHEET
FQA10N80C_F109 N-Channel QFET짰 MOSFET 800 V, 10 A, 1.1 廓, FQA10N80C-F109 Datasheet, FQA10N80C-F109 circuit, FQA10N80C-F109 data sheet : FAIRCHILD, ...