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PSMN2R6-30YLC - Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial ...
Mo***r Electronics : PSMN2R6-30YLC,115 Nexperia
Specifications ; Vds - Drain-Source Breakdown Voltage: 30 V ; Id - Continuous Drain Current: 100 A ; Rds On - Drain-Source Resistance: 2.8 mOhms ; Vgs - Gate-Source ...
Di***ey : PSMN2R6-30YLC,115 Nexperia USA Inc.
PSMN2R6-30YLC,115 ; Technology. MOSFET (Metal Oxide) ; Drive Voltage (Max Rds On, Min Rds On). 4.5V, 10V ; Rds On (Max) @ Id, Vgs. 2.8mOhm @ 25A, 10V ; Vgs(th) (Max) ...
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High reliability Power SO8 package, qualified to 175°C; Low parasitic inductance and resistance; Optimised for 4.5V Gate drive utilising NextPower ...
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