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SPP17N80C3XKSA1 Infineon Technologies MOSFET N-Ch 800V 17A TO220-3 CoolMOS C3 datasheet, inventory, & pricing.
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Order today, ships today. SPP17N80C3XKSA1 – N-Channel 800 V 17A (Tc) 208W (Tc) Through Hole PG-TO220-3-1 from Infineon Technologies.
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Sep 27, 2011 — 7 Drain-source on-state resistance. 8 Typ. transfer characteristics. R DS(on)=f(T j); I D=11 A; V GS=10 V.
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Infineon SPP17N80C3XKSA1 ; Drain to Source Resistance, 250 mΩ ; Drain to Source Voltage (Vdss), 800 V ; Fall Time, 6 ns ; Gate to Source Voltage (Vgs), 20 V ; Max ...
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New revolutionary high voltage technology; Worldwide best RDS(on) in TO 220; Ultra low gate charge; Periodic avalanche rated; Extreme dv/dt rated ...
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Manufacturer Part #. SPP17N80C3XKSA1. Single N-Channel 800 V 290 mOhm 88 nC CoolMOS® Power Mosfet - TO-220-3. SPP17N80C3XKSA1 Datasheet. ECAD Model:.
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SPP17N80C3XKSA1, Trans MOSFET N-CH 800V 17A 3-Pin(3+Tab) TO-220AB Tube (10 Items): Amazon Industrial & Scientific.