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IPW60R099C7XKSA1 ; Technology. MOSFET (Metal Oxide) ; Drain to Source Voltage (Vdss). 600 V ; Current - Continuous Drain (Id) @ 25°C · 14A (Tc) ; Drive Voltage (Max ...
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May 8, 2015 — 1 Description. CoolMOS™ C7 is a revolutionary technology for high voltage power. MOSFETs, designed according to the superjunction (SJ) ...
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IPW60R099C7XKSA1 Infineon Technologies MOSFET HIGH POWER_NEW datasheet, inventory, & pricing.
Oc***art : Infineon IPW60R099C7XKSA1 - MOSFETs
Infineon IPW60R099C7XKSA1 ; Drain to Source Resistance, 85 mΩ ; Drain to Source Voltage (Vdss), 600 V ; Gate to Source Voltage (Vgs), 20 V ; Input Capacitance ...
Ne***k Electronics : IPW60R099C7XKSA1 - Infineon - MOSFET, N-CH, 600V
Buy IPW60R099C7XKSA1 - Infineon - MOSFET, N-CH, 600V, 22A, TO-247-3. Newark offers fast quotes, same day shipping, fast delivery, wide inventory, ...
TM*** : IPW60R099C7XKSA1 INFINEON TECHNOLOGIES ... - TME
IPW60R099C7XKSA1INFINEON TECHNOLOGIES ; Drain current. 22A ; Power dissipation. 110W ; Case. PG-TO247-3 ; Gate-source voltage. ±20V ; On-state resistance. 99mΩ.
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Specifications ; Manufacturer's name, IPW60R099C7XKSA1 ; Case, TO247 ; Max. drain-source voltage [V], 600 ; Max. continuous drain current TC = 25°C [A], 22 ; Max.
Fa***ll : Infineon - Power MOSFET, N Channel, 600 V
Buy IPW60R099C7XKSA1 - Infineon - Power MOSFET, N Channel, 600 V, 22 A, 0.085 ohm, TO-247, Through Hole. Farnell Israel offers fast quotes, ...
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MOSFET, 22 A, 650 V PG-TO 247 Infineon IPW60R099C7XKSA1. RS Stock No. 258-3907. Brand Infineon. Manufacturers Part No. IPW60R099C7XKSA1. Share. Y2583907-01.