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In***eon Technologies : Datasheet IMW65R027M1H
Dec 16, 2019 — MOSFET. 650 V CoolSiCª M1 SiC Trench Power Device. The 650 V CoolSiC™ is built over the solid silicon carbide technology.
In***eon Technologies : IMW65R027M1H
The IMW65R027M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no in getting both the lowest losses ...
Mo***r Electronics : IMW65R027M1HXKSA1 Infineon Technologies
IMW65R027M1HXKSA1 Infineon Technologies MOSFET SILICON CARBIDE MOSFET datasheet, inventory, & pricing.
Di***ey : IMW65R027M1HXKSA1 Infineon Technologies
IMW65R027M1HXKSA1 ; Gate Charge (Qg) (Max) @ Vgs. 62 nC @ 18 V ; Vgs (Max). +23V, -5V ; Input Capacitance (Ciss) (Max) @ Vds. 2131 pF @ 400 V ; FET Feature. -.
Av*** : IMW65R027M1HXKSA1 by Infineon MOSFETs
Transistor Silicon Carbide MOSFET N-CH 650V 47A 3-Pin TO-247 Tube. Infineon. Manufacturer: Infineon. Product Category: Discretes, Transistors, MOSFETs.
Fu***e Electronics : IMW65R027M1HXKSA1 in Tube by Infineon
Buy Infineon IMW65R027M1HXKSA1 in Tube. Single N-Channel 650 V 47 A 189 W CoolSiC™ Through Hole Mosfet - TO-247-3 from Future Electronics.
Ne***k Electronics : IMW65R027M1HXKSA1 - Infineon - MOSFET, N-CH, 650V
Buy IMW65R027M1HXKSA1 - Infineon - MOSFET, N-CH, 650V, 47A, TO-247 ROHS: YES. Newark offers fast quotes, same day shipping, fast delivery, ...
TM*** : IMW65R027M1HXKSA1 INFINEON TECHNOLOGIES ...
INFINEON TECHNOLOGIES IMW65R027M1HXKSA1 | Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 185A; 189W - This product is available in Transfer Multisort ...
Fa***ll : IMW65R027M1HXKSA1 - Infineon - Silicon Carbide ...
Silicon Carbide MOSFET, Single, N Channel, 47 A, 650 V, 0.027 ohm, TO-247 · Images · Price · Availability · Product Information · Product Overview · Applications ...
Sn***DA : IMW65R027M1HXKSA1 footprint & symbol by Infineon ...
Download schematic symbols, PCB footprints, pinout & datasheets for the IMW65R027M1HXKSA1 by Infineon Technologies. MOSFET 650V NCH SIC TRENCH.