Am***on : BLS7G2729LS-350P - Pulsed Radars
350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz. Features and benefits. High efficiency; Excellent ...
Am***on : BLS7G2729L-350P; BLS7G2729LS-350P
1.2 Features and benefits. ▫ High efficiency. ▫ Excellent ruggedness. ▫ Designed for S-band operation (2.7 GHz to 2.9 GHz).
Di***ey : BLS7G2729LS-350P,1 - Discrete Semiconductor Products
BLS7G2729LS-350P,1 – RF Mosfet 32 V 200 mA 2.7GHz ~ 2.9GHz 13dB 350W SOT539B from Ampleon USA Inc.. Pricing and Availability on millions of electronic ...
RF*** : BLS7G2729LS-350P,1 Ampleon RF Power Transistor
Order BLS7G2729LS-350P,1 Ampleon at RFMW, Ltd. View pricing, stock, datasheets, order online, request a quote or submit a technical inquiry.
Ar*** Electronics : BLS7G2729LS-350P,1 by Ampleon | RF FETs
AmpleonBLS7G2729LS-350P,1RF FETs ; Maximum VSWR, 5 ; Maximum Continuous Drain Current (A), 33 ; Maximum Drain Source Resistance (mOhm), 65(Typ)@6.05V ; Typical ...
Da***heetsPDF : BLS7G2729LS-350P transistor Datasheet pdf
1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2. 7 GHz to 2. 9 GHz. Table 1. Typical performance ...
Da***heetsPDF : BLS7G2729LS-350P Datasheet | Ampleon
Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz. Table 1.
zs*** : Ampleon BLS7G2729LS-350P,1 - Discrete Semiconductor ...
This BLS7G2729LS-350P,1 Transistors - FETs, MOSFETs - RF is manufactured by Ampleon, a trusted name in the industry known for their to quality ...
Al***ransistors. Datasheet : BLS7G2729LS-350P MOSFET. Datasheet pdf. Equivalent
Equivalent. Type Designator: BLS7G2729LS-350P. Type of Transistor: LDMOS. Type of Control Channel: N -Channel. Maximum Power Dissipation (Pd): ...