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Tanssion > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > SI8472DB-T2-E1

SI8472DB-T2-E1 Vishay / Siliconix

SI8472DB-T2-E1
  • Part Number: SI8472DB-T2-E1
  • Manufacturer: Vishay / Siliconix
  • Description: In stock. Alternative models available.
  • Lifecycle: New from this manufacturer
  • Datasheet:
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  • More Information: SI8472DB-T2-E1 More Information
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Stock : 3808 Can Ship Immediately

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Qty Unit Price
1+: $0.57

Sub Total: $0.57

Minimum: 1 Multiples: 1
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Current price of SI8472DB-T2-E1 is for reference only,please send email to sales@tanssion.com to get the newest price.

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SI8472DB-T2-E1 Information

  • Specifications
  • Datasheet
  • Product Details
  • Reviews

Vishay / Siliconix SI8472DB-T2-E1 technical specifications,attributes, parameters and parts with similar specifications to Vishay / Siliconix SI8472DB-T2-E1.

  • Type
    Parameter
  • SI8472DB-T2-E1
  • Manufacturer
    Vishay / Siliconix
  • Pricing(USD)
    $0.57
  • Remark
    Manufacturer: Vishay / Siliconix.
    Tanssion is one of the Distributors.
    Wide range of applications.
  • Mount
    Surface Mount
  • Resistance
    44 MΩ
  • Case/Package
    BGA
  • Input Capacitance
    630 pF
  • Element Configuration
    Single
  • Max Operating Temperature
    150 °C
  • Drain to Source Resistance
    44 mΩ
  • Continuous Drain Current (ID)
    4.5 A
  • Drain to Source Breakdown Voltage
    20 V
  • Type
    Parameter
  • Products Category
    Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
  • SI8472DB-T2-E1.pdf
  • 3808 In Stock
  • Applications
  • Rds On Max
    44 mΩ
  • Schedule B
    8541210080
  • Number of Pins
    6
  • Number of Channels
    1
  • Max Power Dissipation
    780 mW
  • Min Operating Temperature
    -55 °C
  • Gate to Source Voltage (Vgs)
    8 V
  • Drain to Source Voltage (Vdss)
    20 V

Download datasheets and manufacturer documentation for Vishay / Siliconix SI8472DB-T2-E1

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SI8472DB-T2-E1 Overview

SI8472DB-T2-E1 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SI8472DB-T2-E1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. SI8472DB-T2-E1 is widely used in Grid infrastructure,Mobile phones,Advanced driver assistance systems (ADAS). It is manufactured by Vishay / Siliconix and distributed by Fans, Tanssion and other distributors. SI8472DB-T2-E1 can be purchased in many ways. You can place an order directly on this website, or you can call or email us. At present, We have sufficient supplies. In addition our own stock, we can also adjust the inventory to the peer distributors to meet your needs. If the supply of SI8472DB-T2-E1 is insufficient, we also have other models under the Discrete Semiconductor Transistors - FETs, MOSFETs - Single category to replace it. Fans provides a 1-year warranty to customers who have purchased this part to ensure that our customers have a wonderful purchasing experience and are willing to establish a long-term relationship with Fans. So you can order SI8472DB-T2-E1 from Fans with confidence. About delivery, we can deliver goods to our customers through a variety of logistics, such as DHL, FedEx, UPS, TNT and EMS or any other freight forwarder. If you want to know more about the freight, feel free to contact us for more details.

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SI8472DB-T2-E1 Information

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The three parts on the right have similar specifications to Vishay / Siliconix SI8472DB-T2-E1.

  • Image

    Part Number
    Manufacturer
    Series
    Package
    FET Type
    Vgs (Max)
    Technology
    FET Feature
    Part Status
    Mounting Type
    Package / Case
    Vgs(th) (Max) @ Id
    Operating Temperature
    Rds On (Max) @ Id, Vgs
    Power Dissipation (Max)
    Supplier Device Package
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Input Capacitance (Ciss) (Max) @ Vds
    Drive Voltage (Max Rds On, Min Rds On)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    View Compare
  • IRFZ20
    IRFZ20
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    100mOhm @ 10A, 10V
    40W (Tc)
    TO-220AB
    17 nC @ 10 V
    50 V
    850 pF @ 25 V
    10V
    15A (Tc)
    -
  • IRF9610
    IRF9610
    Vishay / Siliconix
    -
    Tube
    P-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    3Ohm @ 900mA, 10V
    20W (Tc)
    TO-220AB
    11 nC @ 10 V
    200 V
    170 pF @ 25 V
    10V
    1.8A (Tc)
    -
  • IRF9640
    IRF9640
    Vishay / Siliconix
    -
    Tube
    P-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    500mOhm @ 6.6A, 10V
    125W (Tc)
    TO-220AB
    44 nC @ 10 V
    200 V
    1200 pF @ 25 V
    10V
    11A (Tc)
    -
  • IRFZ24
    IRFZ24
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 175°C (TJ)
    100mOhm @ 10A, 10V
    60W (Tc)
    TO-220AB
    25 nC @ 10 V
    60 V
    640 pF @ 25 V
    10V
    17A (Tc)
    -
  • IRLD110
    IRLD110
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±10V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    4-DIP (0.300", 7.62mm)
    2V @ 250µA
    -55°C ~ 175°C (TJ)
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    1.3W (Ta)
    4-HVMDIP
    6.1 nC @ 5 V
    100 V
    250 pF @ 25 V
    4V, 5V
    1A (Ta)
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