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Tanssion > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > SI1012R-T1-GE3

SI1012R-T1-GE3 Vishay / Siliconix

SI1012R-T1-GE3
  • Part Number: SI1012R-T1-GE3
  • Manufacturer: Vishay / Siliconix
  • Description: In stock. Alternative models available.
  • Lifecycle: New from this manufacturer
  • Datasheet:
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  • More Information: SI1012R-T1-GE3 More Information
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Stock : 4629 Can Ship Immediately

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1+: $0.49

Sub Total: $0.49

Minimum: 1 Multiples: 1
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SI1012R-T1-GE3 Information

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  • Datasheet
  • Product Details
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Vishay / Siliconix SI1012R-T1-GE3 technical specifications,attributes, parameters and parts with similar specifications to Vishay / Siliconix SI1012R-T1-GE3.

  • Type
    Parameter
  • SI1012R-T1-GE3
  • Manufacturer
    Vishay / Siliconix
  • Pricing(USD)
    $0.49
  • Remark
    Manufacturer: Vishay / Siliconix.
    Tanssion is one of the Distributors.
    Wide range of applications.
  • Mount
    Surface Mount
  • Height
    700 µm
  • Fall Time
    5 ns
  • Rds On Max
    700 mΩ
  • Schedule B
    8541210080
  • Number of Pins
    3
  • Threshold Voltage
    800 mV
  • Number of Elements
    1
  • Turn-Off Delay Time
    25 ns
  • Max Power Dissipation
    150 mW
  • Min Operating Temperature
    -55 °C
  • Gate to Source Voltage (Vgs)
    6 V
  • Max Junction Temperature (Tj)
    150 °C
  • Drain to Source Breakdown Voltage
    20 V
  • Type
    Parameter
  • Products Category
    Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
  • SI1012R-T1-GE3.pdf
  • 4629 In Stock
  • Applications
  • Width
    760 µm
  • Length
    1.58 mm
  • Rise Time
    5 ns
  • Resistance
    700 MΩ
  • Case/Package
    SOT-416
  • Power Dissipation
    150 mW
  • Number of Channels
    1
  • Turn-On Delay Time
    5 ns
  • Element Configuration
    Single
  • Max Operating Temperature
    150 °C
  • Drain to Source Resistance
    410 mΩ
  • Continuous Drain Current (ID)
    500 mA
  • Drain to Source Voltage (Vdss)
    20 V

Download datasheets and manufacturer documentation for Vishay / Siliconix SI1012R-T1-GE3

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SI1012R-T1-GE3 Overview

SI1012R-T1-GE3 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SI1012R-T1-GE3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. SI1012R-T1-GE3 is widely used in Mobile phones,Appliances,Wearables (non-medical). It is manufactured by Vishay / Siliconix and distributed by Fans, Tanssion and other distributors. SI1012R-T1-GE3 can be purchased in many ways. You can place an order directly on this website, or you can call or email us. At present, We have sufficient supplies. In addition our own stock, we can also adjust the inventory to the peer distributors to meet your needs. If the supply of SI1012R-T1-GE3 is insufficient, we also have other models under the Discrete Semiconductor Transistors - FETs, MOSFETs - Single category to replace it. Fans provides a 1-year warranty to customers who have purchased this part to ensure that our customers have a wonderful purchasing experience and are willing to establish a long-term relationship with Fans. So you can order SI1012R-T1-GE3 from Fans with confidence. About delivery, we can deliver goods to our customers through a variety of logistics, such as DHL, FedEx, UPS, TNT and EMS or any other freight forwarder. If you want to know more about the freight, feel free to contact us for more details.

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SI1012R-T1-GE3 Information

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The three parts on the right have similar specifications to Vishay / Siliconix SI1012R-T1-GE3.

  • Image

    Part Number
    Manufacturer
    Series
    Package
    FET Type
    Vgs (Max)
    Technology
    FET Feature
    Part Status
    Mounting Type
    Package / Case
    Vgs(th) (Max) @ Id
    Operating Temperature
    Rds On (Max) @ Id, Vgs
    Power Dissipation (Max)
    Supplier Device Package
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Input Capacitance (Ciss) (Max) @ Vds
    Drive Voltage (Max Rds On, Min Rds On)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
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The three parts on the right have similar specifications to Vishay / Siliconix SI1012R-T1-GE3
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  • SI1012R-T1-GE3 RFQ
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