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Tanssion > Products > Discrete Semiconductor > Transistors - Bipolar (BJT) - Arrays > HN2C01FEYTE85LF

HN2C01FEYTE85LF Toshiba Electronic Devices and Storage Corporation

HN2C01FEYTE85LF
  • Part Number: HN2C01FEYTE85LF
  • Manufacturer: Toshiba Electronic Devices and Storage Corporation
  • Description: In stock. Alternative models available.
  • Lifecycle: New from this manufacturer
  • Datasheet:
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  • Payment: T/T Paypal Visa MoneyGram Western Union
  • More Information: HN2C01FEYTE85LF More Information
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Stock : 8216 Can Ship Immediately

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Qty Unit Price
1+: $0.10

Sub Total: $0.10

Minimum: 1 Multiples: 1
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Current price of HN2C01FEYTE85LF is for reference only,please send email to sales@tanssion.com to get the newest price.

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  • T/T

    T/T
  • Paypal

    Paypal
  • Visa

    Visa
  • MoneyGram

    MoneyGram
  • Western Union

    Western Union

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  • DHL(www.dhl.com)

    From $40.00 basic shipping fee depend on zone

  • UPS(www.ups.com)

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  • FedEx(www.fedex.com)

    From $40.00 basic shipping fee depend on zone

  • Registered Mail(www.singpost.com)

    From $40.00 basic shipping fee depend on zone

HN2C01FEYTE85LF Information

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Toshiba Electronic Devices and Storage Corporation HN2C01FEYTE85LF technical specifications,attributes, parameters and parts with similar specifications to Toshiba Electronic Devices and Storage Corporation HN2C01FEYTE85LF.

  • Type
    Parameter
  • HN2C01FEYTE85LF
  • Manufacturer
    Toshiba Electronic Devices and Storage Corporation
  • Pricing(USD)
    $0.10
  • Remark
    Manufacturer: Toshiba Electronic Devices and Storage Corporation.
    Tanssion is one of the Distributors.
    Wide range of applications.
  • Mount
    Surface Mount
  • Polarity
    NPN
  • Case/Package
    SOT-563
  • Element Configuration
    Dual
  • Max Collector Current
    150 mA
  • Gain Bandwidth Product
    60 MHz
  • Collector Base Voltage (VCBO)
    60 V
  • Collector Emitter Breakdown Voltage
    50 V
  • Type
    Parameter
  • Products Category
    Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
  • HN2C01FEYTE85LF.pdf
  • 8216 In Stock
  • Applications
  • hFE Min
    120
  • Packaging
    Tape & Reel (TR)
  • Transition Frequency
    60 MHz
  • Max Breakdown Voltage
    50 V
  • Max Power Dissipation
    100 mW
  • Emitter Base Voltage (VEBO)
    5 V
  • Collector Emitter Voltage (VCEO)
    250 mV
  • Collector Emitter Saturation Voltage
    100 mV

Download datasheets and manufacturer documentation for Toshiba Electronic Devices and Storage Corporation HN2C01FEYTE85LF

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HN2C01FEYTE85LF Overview

HN2C01FEYTE85LF is a model belonging to the Transistors - Bipolar (BJT) - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have HN2C01FEYTE85LF high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. HN2C01FEYTE85LF is widely used in Grid infrastructure,Test & measurement,Power delivery. It is manufactured by Toshiba Electronic Devices and Storage Corporation and distributed by Fans, Tanssion and other distributors. HN2C01FEYTE85LF can be purchased in many ways. You can place an order directly on this website, or you can call or email us. At present, We have sufficient supplies. In addition our own stock, we can also adjust the inventory to the peer distributors to meet your needs. If the supply of HN2C01FEYTE85LF is insufficient, we also have other models under the Discrete Semiconductor Transistors - Bipolar (BJT) - Arrays category to replace it. Fans provides a 1-year warranty to customers who have purchased this part to ensure that our customers have a wonderful purchasing experience and are willing to establish a long-term relationship with Fans. So you can order HN2C01FEYTE85LF from Fans with confidence. About delivery, we can deliver goods to our customers through a variety of logistics, such as DHL, FedEx, UPS, TNT and EMS or any other freight forwarder. If you want to know more about the freight, feel free to contact us for more details.

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HN2C01FEYTE85LF Information

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Toshiba Electronic Devices and Storage Corporation HN2C01FEYTE85LF technical specifications,attributes, parameters and parts with similar specifications to Toshiba Electronic Devices and Storage Corporation HN2C01FEYTE85LF.

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500+: $0.097

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Wide range of applications.

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500+: $0.4656

1000+: $0.4608

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The three parts on the right have similar specifications to Toshiba Electronic Devices and Storage Corporation HN2C01FEYTE85LF.

  • Image

    Part Number
    Manufacturer
    Series
    Package
    Part Status
    Power - Max
    Mounting Type
    Package / Case
    Transistor Type
    Operating Temperature
    Frequency - Transition
    Supplier Device Package
    Vce Saturation (Max) @ Ib, Ic
    Current - Collector (Ic) (Max)
    Current - Collector Cutoff (Max)
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Voltage - Collector Emitter Breakdown (Max)
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    -
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    500mA
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  • ULN2805A
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  • ULQ2001D1013TR
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    -
    -
    Surface Mount
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    7 NPN Darlington
    150°C (TJ)
    -
    16-SO
    1.6V @ 500µA, 350mA
    500mA
    -
    1000 @ 350mA, 2V
    50V
  • E-ULN2004A
    E-ULN2004A
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The three parts on the right have similar specifications to Toshiba Electronic Devices and Storage Corporation HN2C01FEYTE85LF
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