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Tanssion > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > STW80NE06-10

STW80NE06-10 STMicroelectronics

STW80NE06-10
  • Part Number: STW80NE06-10
  • Manufacturer: STMicroelectronics
  • Description: In stock. Alternative models available.
  • Lifecycle: New from this manufacturer
  • Datasheet:
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  • Payment: T/T Paypal Visa MoneyGram Western Union
  • More Information: STW80NE06-10 More Information
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Stock : 951 Can Ship Immediately

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  • T/T

    T/T
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  • Visa

    Visa
  • MoneyGram

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  • Western Union

    Western Union

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  • DHL(www.dhl.com)

    From $40.00 basic shipping fee depend on zone

  • UPS(www.ups.com)

    From $40.00 basic shipping fee depend on zone

  • FedEx(www.fedex.com)

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  • Registered Mail(www.singpost.com)

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STW80NE06-10 Information

  • Specifications
  • Datasheet
  • Product Details
  • Reviews

STMicroelectronics STW80NE06-10 technical specifications,attributes, parameters and parts with similar specifications to STMicroelectronics STW80NE06-10.

  • Type
    Parameter
  • STW80NE06-10
  • Manufacturer
    STMicroelectronics
  • Pricing(USD)
    $0.00
  • Remark
    Manufacturer: STMicroelectronics.
    Tanssion is one of the Distributors.
    Wide range of applications.
  • Mount
    Through Hole
  • Rise Time
    150 ns
  • Case/Package
    TO-247-3
  • Input Capacitance
    7.6 nF
  • Voltage Rating (DC)
    60 V
  • Max Power Dissipation
    250 W
  • Min Operating Temperature
    -65 °C
  • Gate to Source Voltage (Vgs)
    20 V
  • Drain to Source Voltage (Vdss)
    60 V
  • Type
    Parameter
  • Products Category
    Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
  • STW80NE06-10.pdf
  • 951 In Stock
  • Applications
  • Fall Time
    75 ns
  • Rds On Max
    10 mΩ
  • Current Rating
    80 A
  • Power Dissipation
    250 W
  • Element Configuration
    Single
  • Max Operating Temperature
    175 °C
  • Drain to Source Resistance
    10 mΩ
  • Continuous Drain Current (ID)
    80 A
  • Drain to Source Breakdown Voltage
    60 V

Download datasheets and manufacturer documentation for STMicroelectronics STW80NE06-10

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STW80NE06-10 Overview

STW80NE06-10 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have STW80NE06-10 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. STW80NE06-10 is widely used in Wireless infrastructure,Data center & enterprise computing,Enterprise projectors. It is manufactured by STMicroelectronics and distributed by Fans, Tanssion and other distributors. STW80NE06-10 can be purchased in many ways. You can place an order directly on this website, or you can call or email us. At present, We have sufficient supplies. In addition our own stock, we can also adjust the inventory to the peer distributors to meet your needs. If the supply of STW80NE06-10 is insufficient, we also have other models under the Discrete Semiconductor Transistors - FETs, MOSFETs - Single category to replace it. Fans provides a 1-year warranty to customers who have purchased this part to ensure that our customers have a wonderful purchasing experience and are willing to establish a long-term relationship with Fans. So you can order STW80NE06-10 from Fans with confidence. About delivery, we can deliver goods to our customers through a variety of logistics, such as DHL, FedEx, UPS, TNT and EMS or any other freight forwarder. If you want to know more about the freight, feel free to contact us for more details.

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The three parts on the right have similar specifications to STMicroelectronics STW80NE06-10.

  • Image

    Part Number
    Manufacturer
    Series
    Package
    FET Type
    Vgs (Max)
    Technology
    FET Feature
    Part Status
    Mounting Type
    Package / Case
    Vgs(th) (Max) @ Id
    Operating Temperature
    Rds On (Max) @ Id, Vgs
    Power Dissipation (Max)
    Supplier Device Package
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Input Capacitance (Ciss) (Max) @ Vds
    Drive Voltage (Max Rds On, Min Rds On)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    View Compare
  • IRFZ20
    IRFZ20
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    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
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    4V @ 250µA
    -55°C ~ 150°C (TJ)
    100mOhm @ 10A, 10V
    40W (Tc)
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    50 V
    850 pF @ 25 V
    10V
    15A (Tc)
    -
  • IRF9610
    IRF9610
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    Tube
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    -
    Through Hole
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    4V @ 250µA
    -55°C ~ 150°C (TJ)
    3Ohm @ 900mA, 10V
    20W (Tc)
    TO-220AB
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    200 V
    170 pF @ 25 V
    10V
    1.8A (Tc)
    -
  • IRF9640
    IRF9640
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    -
    Tube
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    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
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    -55°C ~ 150°C (TJ)
    500mOhm @ 6.6A, 10V
    125W (Tc)
    TO-220AB
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    200 V
    1200 pF @ 25 V
    10V
    11A (Tc)
    -
  • IRFZ24
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    Tube
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    -
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    -55°C ~ 175°C (TJ)
    100mOhm @ 10A, 10V
    60W (Tc)
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    25 nC @ 10 V
    60 V
    640 pF @ 25 V
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  • IRLD110
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