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Tanssion > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > STD2HNK60Z-1

STD2HNK60Z-1 STMicroelectronics

STD2HNK60Z-1
  • Part Number: STD2HNK60Z-1
  • Manufacturer: STMicroelectronics
  • Description: In stock. Alternative models available.
  • Lifecycle: New from this manufacturer
  • Datasheet:
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  • More Information: STD2HNK60Z-1 More Information
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Stock : 5996 Can Ship Immediately

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Qty Unit Price
1+: $1.41

Sub Total: $1.41

Minimum: 1 Multiples: 1
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  • Registered Mail(www.singpost.com)

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STD2HNK60Z-1 Information

  • Specifications
  • Datasheet
  • Product Details
  • Reviews

STMicroelectronics STD2HNK60Z-1 technical specifications,attributes, parameters and parts with similar specifications to STMicroelectronics STD2HNK60Z-1.

  • Type
    Parameter
  • STD2HNK60Z-1
  • Manufacturer
    STMicroelectronics
  • Pricing(USD)
    $1.41
  • Remark
    Manufacturer: STMicroelectronics.
    Tanssion is one of the Distributors.
    Wide range of applications.
  • Mount
    Through Hole
  • Height
    6.35 mm
  • Weight
    4.535924 g
  • Rise Time
    30 ns
  • Resistance
    4.8 Ω
  • Nominal Vgs
    3.75 V
  • Number of Pins
    3
  • Power Dissipation
    45 W
  • Number of Elements
    1
  • Turn-Off Delay Time
    13 ns
  • Max Power Dissipation
    45 W
  • Min Operating Temperature
    -55 °C
  • Gate to Source Voltage (Vgs)
    30 V
  • Drain to Source Voltage (Vdss)
    600 V
  • Type
    Parameter
  • Products Category
    Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
  • STD2HNK60Z-1.pdf
  • 5996 In Stock
  • Applications
  • Width
    6.35 mm
  • Length
    19.05 mm
  • Fall Time
    50 ns
  • Rds On Max
    4.8 Ω
  • Schedule B
    8541290080
  • Case/Package
    TO-251-3
  • Input Capacitance
    280 pF
  • Threshold Voltage
    3.75 V
  • Turn-On Delay Time
    10 ns
  • Element Configuration
    Single
  • Max Operating Temperature
    150 °C
  • Drain to Source Resistance
    4.8 Ω
  • Continuous Drain Current (ID)
    2 A
  • Drain to Source Breakdown Voltage
    600 V

Download datasheets and manufacturer documentation for STMicroelectronics STD2HNK60Z-1

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STD2HNK60Z-1 Overview

STD2HNK60Z-1 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have STD2HNK60Z-1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. STD2HNK60Z-1 is widely used in Wired networking,PC & notebooks,Body electronics & lighting. It is manufactured by STMicroelectronics and distributed by Fans, Tanssion and other distributors. STD2HNK60Z-1 can be purchased in many ways. You can place an order directly on this website, or you can call or email us. At present, We have sufficient supplies. In addition our own stock, we can also adjust the inventory to the peer distributors to meet your needs. If the supply of STD2HNK60Z-1 is insufficient, we also have other models under the Discrete Semiconductor Transistors - FETs, MOSFETs - Single category to replace it. Fans provides a 1-year warranty to customers who have purchased this part to ensure that our customers have a wonderful purchasing experience and are willing to establish a long-term relationship with Fans. So you can order STD2HNK60Z-1 from Fans with confidence. About delivery, we can deliver goods to our customers through a variety of logistics, such as DHL, FedEx, UPS, TNT and EMS or any other freight forwarder. If you want to know more about the freight, feel free to contact us for more details.

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STD2HNK60Z-1 Information

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The three parts on the right have similar specifications to STMicroelectronics STD2HNK60Z-1.

  • Image

    Part Number
    Manufacturer
    Series
    Package
    FET Type
    Vgs (Max)
    Technology
    FET Feature
    Part Status
    Mounting Type
    Package / Case
    Vgs(th) (Max) @ Id
    Operating Temperature
    Rds On (Max) @ Id, Vgs
    Power Dissipation (Max)
    Supplier Device Package
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Input Capacitance (Ciss) (Max) @ Vds
    Drive Voltage (Max Rds On, Min Rds On)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    View Compare
  • IRFZ20
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    -
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    ±20V
    MOSFET (Metal Oxide)
    -
    -
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    4V @ 250µA
    -55°C ~ 150°C (TJ)
    100mOhm @ 10A, 10V
    40W (Tc)
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    50 V
    850 pF @ 25 V
    10V
    15A (Tc)
    -
  • IRF9610
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    4V @ 250µA
    -55°C ~ 150°C (TJ)
    3Ohm @ 900mA, 10V
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    200 V
    170 pF @ 25 V
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  • IRF9640
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    -55°C ~ 150°C (TJ)
    500mOhm @ 6.6A, 10V
    125W (Tc)
    TO-220AB
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    200 V
    1200 pF @ 25 V
    10V
    11A (Tc)
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  • IRFZ24
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    -
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    -55°C ~ 175°C (TJ)
    100mOhm @ 10A, 10V
    60W (Tc)
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    25 nC @ 10 V
    60 V
    640 pF @ 25 V
    10V
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  • IRLD110
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