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Tanssion > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > FQPF9N90CT

FQPF9N90CT Sanyo Semiconductor/ON Semiconductor

FQPF9N90CT
  • Part Number: FQPF9N90CT
  • Manufacturer: Sanyo Semiconductor/ON Semiconductor
  • Description: In stock. Alternative models available.
  • Lifecycle: New from this manufacturer
  • Datasheet:
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  • More Information: FQPF9N90CT More Information
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Stock : 6965 Can Ship Immediately

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Qty Unit Price
1+: $3.06

Sub Total: $3.06

Minimum: 1 Multiples: 1
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Current price of FQPF9N90CT is for reference only,please send email to sales@tanssion.com to get the newest price.

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FQPF9N90CT Information

  • Specifications
  • Datasheet
  • Product Details
  • Reviews

Sanyo Semiconductor/ON Semiconductor FQPF9N90CT technical specifications,attributes, parameters and parts with similar specifications to Sanyo Semiconductor/ON Semiconductor FQPF9N90CT.

  • Type
    Parameter
  • FQPF9N90CT
  • Manufacturer
    Sanyo Semiconductor/ON Semiconductor
  • Pricing(USD)
    $3.06
  • Remark
    Manufacturer: Sanyo Semiconductor/ON Semiconductor.
    Tanssion is one of the Distributors.
    Wide range of applications.
  • Mount
    Through Hole
  • Height
    16.07 mm
  • Weight
    2.27 g
  • Rise Time
    120 ns
  • Resistance
    1.4 Ω
  • Nominal Vgs
    3 V
  • Number of Pins
    3
  • Power Dissipation
    68 W
  • Number of Elements
    1
  • Turn-Off Delay Time
    100 ns
  • Max Power Dissipation
    68 W
  • Min Operating Temperature
    -55 °C
  • Gate to Source Voltage (Vgs)
    30 V
  • Drain to Source Voltage (Vdss)
    900 V
  • Type
    Parameter
  • Products Category
    Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
  • FQPF9N90CT.pdf
  • 6965 In Stock
  • Applications
  • Width
    4.9 mm
  • Length
    10.36 mm
  • Fall Time
    75 ns
  • Rds On Max
    1.4 Ω
  • Schedule B
    8541290080
  • Case/Package
    TO-220-3
  • Input Capacitance
    2.73 nF
  • Threshold Voltage
    3 V
  • Turn-On Delay Time
    50 ns
  • Element Configuration
    Single
  • Max Operating Temperature
    150 °C
  • Drain to Source Resistance
    1.4 Ω
  • Continuous Drain Current (ID)
    8 A
  • Drain to Source Breakdown Voltage
    900 V

Download datasheets and manufacturer documentation for Sanyo Semiconductor/ON Semiconductor FQPF9N90CT

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FQPF9N90CT Overview

FQPF9N90CT is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have FQPF9N90CT high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. FQPF9N90CT is widely used in Building automation,Enterprise machine,Data center & enterprise computing. It is manufactured by Sanyo Semiconductor/ON Semiconductor and distributed by Fans, Tanssion and other distributors. FQPF9N90CT can be purchased in many ways. You can place an order directly on this website, or you can call or email us. At present, We have sufficient supplies. In addition our own stock, we can also adjust the inventory to the peer distributors to meet your needs. If the supply of FQPF9N90CT is insufficient, we also have other models under the Discrete Semiconductor Transistors - FETs, MOSFETs - Single category to replace it. Fans provides a 1-year warranty to customers who have purchased this part to ensure that our customers have a wonderful purchasing experience and are willing to establish a long-term relationship with Fans. So you can order FQPF9N90CT from Fans with confidence. About delivery, we can deliver goods to our customers through a variety of logistics, such as DHL, FedEx, UPS, TNT and EMS or any other freight forwarder. If you want to know more about the freight, feel free to contact us for more details.

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FQPF9N90CT Information

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The three parts on the right have similar specifications to Sanyo Semiconductor/ON Semiconductor FQPF9N90CT.

  • Image

    Part Number
    Manufacturer
    Series
    Package
    FET Type
    Vgs (Max)
    Technology
    FET Feature
    Part Status
    Mounting Type
    Package / Case
    Vgs(th) (Max) @ Id
    Operating Temperature
    Rds On (Max) @ Id, Vgs
    Power Dissipation (Max)
    Supplier Device Package
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Input Capacitance (Ciss) (Max) @ Vds
    Drive Voltage (Max Rds On, Min Rds On)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    View Compare
  • IRFZ20
    IRFZ20
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    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
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    4V @ 250µA
    -55°C ~ 150°C (TJ)
    100mOhm @ 10A, 10V
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    850 pF @ 25 V
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  • IRF9610
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    Tube
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    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    3Ohm @ 900mA, 10V
    20W (Tc)
    TO-220AB
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    200 V
    170 pF @ 25 V
    10V
    1.8A (Tc)
    -
  • IRF9640
    IRF9640
    Vishay / Siliconix
    -
    Tube
    P-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    500mOhm @ 6.6A, 10V
    125W (Tc)
    TO-220AB
    44 nC @ 10 V
    200 V
    1200 pF @ 25 V
    10V
    11A (Tc)
    -
  • IRFZ24
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    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 175°C (TJ)
    100mOhm @ 10A, 10V
    60W (Tc)
    TO-220AB
    25 nC @ 10 V
    60 V
    640 pF @ 25 V
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  • IRLD110
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