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Tanssion > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > FDP5N50NZ

FDP5N50NZ Sanyo Semiconductor/ON Semiconductor

FDP5N50NZ
  • Part Number: FDP5N50NZ
  • Manufacturer: Sanyo Semiconductor/ON Semiconductor
  • Description: In stock. Alternative models available.
  • Lifecycle: New from this manufacturer
  • Datasheet:
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  • More Information: FDP5N50NZ More Information
  • ECAD: Request Free CAD Models
Stock : 5701 Can Ship Immediately

Unit Price: Call

Qty Unit Price
1+: $1.14

Sub Total: $1.14

Minimum: 1 Multiples: 1
RFQ

Current price of FDP5N50NZ is for reference only,please send email to sales@tanssion.com to get the newest price.

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  • DHL(www.dhl.com)

    From $40.00 basic shipping fee depend on zone

  • UPS(www.ups.com)

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  • Registered Mail(www.singpost.com)

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FDP5N50NZ Information

  • Specifications
  • Datasheet
  • Product Details
  • Reviews

Sanyo Semiconductor/ON Semiconductor FDP5N50NZ technical specifications,attributes, parameters and parts with similar specifications to Sanyo Semiconductor/ON Semiconductor FDP5N50NZ.

  • Type
    Parameter
  • FDP5N50NZ
  • Manufacturer
    Sanyo Semiconductor/ON Semiconductor
  • Pricing(USD)
    $1.14
  • Remark
    Manufacturer: Sanyo Semiconductor/ON Semiconductor.
    Tanssion is one of the Distributors.
    Wide range of applications.
  • Mount
    Through Hole
  • Height
    16.3 mm
  • Weight
    1.8 g
  • Packaging
    Rail/Tube
  • Rds On Max
    1.5 Ω
  • Number of Pins
    3
  • Power Dissipation
    78 W
  • Turn-On Delay Time
    12 ns
  • Element Configuration
    Single
  • Max Operating Temperature
    150 °C
  • Drain to Source Resistance
    1.38 Ω
  • Continuous Drain Current (ID)
    4.5 A
  • Drain to Source Breakdown Voltage
    500 V
  • Type
    Parameter
  • Products Category
    Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
  • FDP5N50NZ.pdf
  • 5701 In Stock
  • Applications
  • Width
    4.7 mm
  • Length
    10.67 mm
  • Fall Time
    21 ns
  • Rise Time
    22 ns
  • Case/Package
    TO-220
  • Input Capacitance
    440 pF
  • Number of Elements
    1
  • Turn-Off Delay Time
    28 ns
  • Max Power Dissipation
    78 W
  • Min Operating Temperature
    -55 °C
  • Gate to Source Voltage (Vgs)
    25 V
  • Drain to Source Voltage (Vdss)
    500 V

Download datasheets and manufacturer documentation for Sanyo Semiconductor/ON Semiconductor FDP5N50NZ

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FDP5N50NZ Overview

FDP5N50NZ is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have FDP5N50NZ high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. FDP5N50NZ is widely used in Broadband fixed line access,Infotainment & cluster,Wireless infrastructure. It is manufactured by Sanyo Semiconductor/ON Semiconductor and distributed by Fans, Tanssion and other distributors. FDP5N50NZ can be purchased in many ways. You can place an order directly on this website, or you can call or email us. At present, We have sufficient supplies. In addition our own stock, we can also adjust the inventory to the peer distributors to meet your needs. If the supply of FDP5N50NZ is insufficient, we also have other models under the Discrete Semiconductor Transistors - FETs, MOSFETs - Single category to replace it. Fans provides a 1-year warranty to customers who have purchased this part to ensure that our customers have a wonderful purchasing experience and are willing to establish a long-term relationship with Fans. So you can order FDP5N50NZ from Fans with confidence. About delivery, we can deliver goods to our customers through a variety of logistics, such as DHL, FedEx, UPS, TNT and EMS or any other freight forwarder. If you want to know more about the freight, feel free to contact us for more details.

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FDP5N50NZ Information

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The three parts on the right have similar specifications to Sanyo Semiconductor/ON Semiconductor FDP5N50NZ.

  • Image

    Part Number
    Manufacturer
    Series
    Package
    FET Type
    Vgs (Max)
    Technology
    FET Feature
    Part Status
    Mounting Type
    Package / Case
    Vgs(th) (Max) @ Id
    Operating Temperature
    Rds On (Max) @ Id, Vgs
    Power Dissipation (Max)
    Supplier Device Package
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Input Capacitance (Ciss) (Max) @ Vds
    Drive Voltage (Max Rds On, Min Rds On)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    View Compare
  • IRFZ20
    IRFZ20
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    100mOhm @ 10A, 10V
    40W (Tc)
    TO-220AB
    17 nC @ 10 V
    50 V
    850 pF @ 25 V
    10V
    15A (Tc)
    -
  • IRF9610
    IRF9610
    Vishay / Siliconix
    -
    Tube
    P-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    3Ohm @ 900mA, 10V
    20W (Tc)
    TO-220AB
    11 nC @ 10 V
    200 V
    170 pF @ 25 V
    10V
    1.8A (Tc)
    -
  • IRF9640
    IRF9640
    Vishay / Siliconix
    -
    Tube
    P-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    500mOhm @ 6.6A, 10V
    125W (Tc)
    TO-220AB
    44 nC @ 10 V
    200 V
    1200 pF @ 25 V
    10V
    11A (Tc)
    -
  • IRFZ24
    IRFZ24
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 175°C (TJ)
    100mOhm @ 10A, 10V
    60W (Tc)
    TO-220AB
    25 nC @ 10 V
    60 V
    640 pF @ 25 V
    10V
    17A (Tc)
    -
  • IRLD110
    IRLD110
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±10V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    4-DIP (0.300", 7.62mm)
    2V @ 250µA
    -55°C ~ 175°C (TJ)
    540mOhm @ 600mA, 5V
    1.3W (Ta)
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    100 V
    250 pF @ 25 V
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