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Tanssion > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > FDB120N10

FDB120N10 Sanyo Semiconductor/ON Semiconductor

FDB120N10
  • Part Number: FDB120N10
  • Manufacturer: Sanyo Semiconductor/ON Semiconductor
  • Description: In stock. Alternative models available.
  • Lifecycle: New from this manufacturer
  • Datasheet:
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  • More Information: FDB120N10 More Information
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Stock : 4269 Can Ship Immediately

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Qty Unit Price
1+: $3.03

Sub Total: $3.03

Minimum: 1 Multiples: 1
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Current price of FDB120N10 is for reference only,please send email to sales@tanssion.com to get the newest price.

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  • T/T

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    From $40.00 basic shipping fee depend on zone

  • UPS(www.ups.com)

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  • FedEx(www.fedex.com)

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  • Registered Mail(www.singpost.com)

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FDB120N10 Information

  • Specifications
  • Datasheet
  • Product Details
  • Reviews

Sanyo Semiconductor/ON Semiconductor FDB120N10 technical specifications,attributes, parameters and parts with similar specifications to Sanyo Semiconductor/ON Semiconductor FDB120N10.

  • Type
    Parameter
  • FDB120N10
  • Manufacturer
    Sanyo Semiconductor/ON Semiconductor
  • Pricing(USD)
    $3.03
  • Remark
    Manufacturer: Sanyo Semiconductor/ON Semiconductor.
    Tanssion is one of the Distributors.
    Wide range of applications.
  • Mount
    Surface Mount
  • Height
    4.83 mm
  • Weight
    1.31247 g
  • Rise Time
    105 ns
  • Schedule B
    8541290080
  • Number of Pins
    3
  • Power Dissipation
    170 W
  • Turn-On Delay Time
    27 ns
  • Element Configuration
    Single
  • Max Operating Temperature
    175 °C
  • Drain to Source Resistance
    9.7 Ω
  • Continuous Drain Current (ID)
    74 A
  • Drain to Source Breakdown Voltage
    100 V
  • Type
    Parameter
  • Products Category
    Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
  • FDB120N10.pdf
  • 4269 In Stock
  • Applications
  • Width
    9.65 mm
  • Length
    10.67 mm
  • Fall Time
    15 ns
  • Rds On Max
    12 mΩ
  • Case/Package
    D2PAK
  • Input Capacitance
    5.605 nF
  • Number of Elements
    1
  • Turn-Off Delay Time
    39 ns
  • Max Power Dissipation
    170 W
  • Min Operating Temperature
    -55 °C
  • Gate to Source Voltage (Vgs)
    20 V
  • Drain to Source Voltage (Vdss)
    100 V

Download datasheets and manufacturer documentation for Sanyo Semiconductor/ON Semiconductor FDB120N10

Filter Document:

FDB120N10 Overview

FDB120N10 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have FDB120N10 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. FDB120N10 is widely used in Data storage,Wired networking,Grid infrastructure. It is manufactured by Sanyo Semiconductor/ON Semiconductor and distributed by Fans, Tanssion and other distributors. FDB120N10 can be purchased in many ways. You can place an order directly on this website, or you can call or email us. At present, We have sufficient supplies. In addition our own stock, we can also adjust the inventory to the peer distributors to meet your needs. If the supply of FDB120N10 is insufficient, we also have other models under the Discrete Semiconductor Transistors - FETs, MOSFETs - Single category to replace it. Fans provides a 1-year warranty to customers who have purchased this part to ensure that our customers have a wonderful purchasing experience and are willing to establish a long-term relationship with Fans. So you can order FDB120N10 from Fans with confidence. About delivery, we can deliver goods to our customers through a variety of logistics, such as DHL, FedEx, UPS, TNT and EMS or any other freight forwarder. If you want to know more about the freight, feel free to contact us for more details.

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FDB120N10 Information

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The three parts on the right have similar specifications to Sanyo Semiconductor/ON Semiconductor FDB120N10.

  • Image

    Part Number
    Manufacturer
    Series
    Package
    FET Type
    Vgs (Max)
    Technology
    FET Feature
    Part Status
    Mounting Type
    Package / Case
    Vgs(th) (Max) @ Id
    Operating Temperature
    Rds On (Max) @ Id, Vgs
    Power Dissipation (Max)
    Supplier Device Package
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Input Capacitance (Ciss) (Max) @ Vds
    Drive Voltage (Max Rds On, Min Rds On)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    View Compare
  • IRFZ20
    IRFZ20
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    100mOhm @ 10A, 10V
    40W (Tc)
    TO-220AB
    17 nC @ 10 V
    50 V
    850 pF @ 25 V
    10V
    15A (Tc)
    -
  • IRF9610
    IRF9610
    Vishay / Siliconix
    -
    Tube
    P-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    3Ohm @ 900mA, 10V
    20W (Tc)
    TO-220AB
    11 nC @ 10 V
    200 V
    170 pF @ 25 V
    10V
    1.8A (Tc)
    -
  • IRF9640
    IRF9640
    Vishay / Siliconix
    -
    Tube
    P-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    500mOhm @ 6.6A, 10V
    125W (Tc)
    TO-220AB
    44 nC @ 10 V
    200 V
    1200 pF @ 25 V
    10V
    11A (Tc)
    -
  • IRFZ24
    IRFZ24
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 175°C (TJ)
    100mOhm @ 10A, 10V
    60W (Tc)
    TO-220AB
    25 nC @ 10 V
    60 V
    640 pF @ 25 V
    10V
    17A (Tc)
    -
  • IRLD110
    IRLD110
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±10V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    4-DIP (0.300", 7.62mm)
    2V @ 250µA
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