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Tanssion > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > FQB8N60CFTM

FQB8N60CFTM Rochester Electronics

FQB8N60CFTM
  • Part Number: FQB8N60CFTM
  • Manufacturer: Rochester Electronics
  • Description: In stock. Alternative models available.
  • Lifecycle: New from this manufacturer
  • Datasheet:
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  • Payment: T/T Paypal Visa MoneyGram Western Union
  • More Information: FQB8N60CFTM More Information
  • ECAD: Request Free CAD Models
Stock : 785 Can Ship Immediately

Unit Price: Call

Qty Unit Price
1+: $1.07

Sub Total: $1.07

Minimum: 1 Multiples: 1
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Current price of FQB8N60CFTM is for reference only,please send email to sales@tanssion.com to get the newest price.

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  • T/T

    T/T
  • Paypal

    Paypal
  • Visa

    Visa
  • MoneyGram

    MoneyGram
  • Western Union

    Western Union

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  • DHL(www.dhl.com)

    From $40.00 basic shipping fee depend on zone

  • UPS(www.ups.com)

    From $40.00 basic shipping fee depend on zone

  • FedEx(www.fedex.com)

    From $40.00 basic shipping fee depend on zone

  • Registered Mail(www.singpost.com)

    From $40.00 basic shipping fee depend on zone

FQB8N60CFTM Information

  • Specifications
  • Datasheet
  • Product Details
  • Reviews

Rochester Electronics FQB8N60CFTM technical specifications,attributes, parameters and parts with similar specifications to Rochester Electronics FQB8N60CFTM.

  • Type
    Parameter
  • FQB8N60CFTM
  • Manufacturer
    Rochester Electronics
  • Pricing(USD)
    $1.07
  • Remark
    Manufacturer: Rochester Electronics.
    Tanssion is one of the Distributors.
    Wide range of applications.
  • Mount
    Surface Mount
  • Rise Time
    60.5 ns
  • Case/Package
    D2PAK
  • Input Capacitance
    1.255 nF
  • Number of Elements
    1
  • Element Configuration
    Single
  • Max Operating Temperature
    150 °C
  • Drain to Source Resistance
    1.25 Ω
  • Continuous Drain Current (ID)
    6.26 A
  • Drain to Source Breakdown Voltage
    600 V
  • Type
    Parameter
  • Products Category
    Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
  • FQB8N60CFTM.pdf
  • 785 In Stock
  • Applications
  • Fall Time
    64.5 ns
  • Rds On Max
    1.5 Ω
  • Number of Pins
    3
  • Power Dissipation
    147 W
  • Turn-Off Delay Time
    81 ns
  • Max Power Dissipation
    147 W
  • Min Operating Temperature
    -55 °C
  • Gate to Source Voltage (Vgs)
    30 V
  • Drain to Source Voltage (Vdss)
    600 V

Download datasheets and manufacturer documentation for Rochester Electronics FQB8N60CFTM

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FQB8N60CFTM Overview

FQB8N60CFTM is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have FQB8N60CFTM high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. FQB8N60CFTM is widely used in Wearables (non-medical),Hybrid, electric & powertrain systems,Home theater & entertainment. It is manufactured by Rochester Electronics and distributed by Fans, Tanssion and other distributors. FQB8N60CFTM can be purchased in many ways. You can place an order directly on this website, or you can call or email us. At present, We have sufficient supplies. In addition our own stock, we can also adjust the inventory to the peer distributors to meet your needs. If the supply of FQB8N60CFTM is insufficient, we also have other models under the Discrete Semiconductor Transistors - FETs, MOSFETs - Single category to replace it. Fans provides a 1-year warranty to customers who have purchased this part to ensure that our customers have a wonderful purchasing experience and are willing to establish a long-term relationship with Fans. So you can order FQB8N60CFTM from Fans with confidence. About delivery, we can deliver goods to our customers through a variety of logistics, such as DHL, FedEx, UPS, TNT and EMS or any other freight forwarder. If you want to know more about the freight, feel free to contact us for more details.

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FQB8N60CFTM Information

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The three parts on the right have similar specifications to Rochester Electronics FQB8N60CFTM.

  • Image

    Part Number
    Manufacturer
    Series
    Package
    FET Type
    Vgs (Max)
    Technology
    FET Feature
    Part Status
    Mounting Type
    Package / Case
    Vgs(th) (Max) @ Id
    Operating Temperature
    Rds On (Max) @ Id, Vgs
    Power Dissipation (Max)
    Supplier Device Package
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Input Capacitance (Ciss) (Max) @ Vds
    Drive Voltage (Max Rds On, Min Rds On)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    View Compare
  • IRFZ20
    IRFZ20
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    100mOhm @ 10A, 10V
    40W (Tc)
    TO-220AB
    17 nC @ 10 V
    50 V
    850 pF @ 25 V
    10V
    15A (Tc)
    -
  • IRF9610
    IRF9610
    Vishay / Siliconix
    -
    Tube
    P-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    3Ohm @ 900mA, 10V
    20W (Tc)
    TO-220AB
    11 nC @ 10 V
    200 V
    170 pF @ 25 V
    10V
    1.8A (Tc)
    -
  • IRF9640
    IRF9640
    Vishay / Siliconix
    -
    Tube
    P-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    500mOhm @ 6.6A, 10V
    125W (Tc)
    TO-220AB
    44 nC @ 10 V
    200 V
    1200 pF @ 25 V
    10V
    11A (Tc)
    -
  • IRFZ24
    IRFZ24
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 175°C (TJ)
    100mOhm @ 10A, 10V
    60W (Tc)
    TO-220AB
    25 nC @ 10 V
    60 V
    640 pF @ 25 V
    10V
    17A (Tc)
    -
  • IRLD110
    IRLD110
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±10V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    4-DIP (0.300", 7.62mm)
    2V @ 250µA
    -55°C ~ 175°C (TJ)
    540mOhm @ 600mA, 5V
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    100 V
    250 pF @ 25 V
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    -
The three parts on the right have similar specifications to Rochester Electronics FQB8N60CFTM
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