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Tanssion > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > IPD031N06L3GATMA1

IPD031N06L3GATMA1 IR (Infineon Technologies)

IPD031N06L3GATMA1
  • Part Number: IPD031N06L3GATMA1
  • Manufacturer: IR (Infineon Technologies)
  • Description: In stock. Alternative models available.
  • Lifecycle: New from this manufacturer
  • Datasheet:
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  • More Information: IPD031N06L3GATMA1 More Information
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Stock : 8555 Can Ship Immediately

Unit Price: Call

Qty Unit Price
1+: $2.41

Sub Total: $2.41

Minimum: 1 Multiples: 1
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Current price of IPD031N06L3GATMA1 is for reference only,please send email to sales@tanssion.com to get the newest price.

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IPD031N06L3GATMA1 Information

  • Specifications
  • Datasheet
  • Product Details
  • Reviews

IR (Infineon Technologies) IPD031N06L3GATMA1 technical specifications,attributes, parameters and parts with similar specifications to IR (Infineon Technologies) IPD031N06L3GATMA1.

  • Type
    Parameter
  • IPD031N06L3GATMA1
  • Manufacturer
    IR (Infineon Technologies)
  • Pricing(USD)
    $2.41
  • Remark
    Manufacturer: IR (Infineon Technologies).
    Tanssion is one of the Distributors.
    Wide range of applications.
  • Mount
    Surface Mount
  • Packaging
    Tape & Reel
  • Schedule B
    8541290080
  • Number of Pins
    3
  • Input Capacitance
    10 nF
  • Number of Elements
    1
  • On-State Resistance
    3.1 mΩ
  • Max Dual Supply Voltage
    60 V
  • Min Operating Temperature
    -55 °C
  • Gate to Source Voltage (Vgs)
    20 V
  • Drain to Source Voltage (Vdss)
    60 V
  • Type
    Parameter
  • Products Category
    Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
  • IPD031N06L3GATMA1.pdf
  • 8555 In Stock
  • Applications
  • Fall Time
    13 ns
  • Rise Time
    78 ns
  • Case/Package
    TO-252
  • Package Quantity
    2500
  • Power Dissipation
    167 W
  • Turn-On Delay Time
    25 ns
  • Turn-Off Delay Time
    64 ns
  • Max Operating Temperature
    175 °C
  • Drain to Source Resistance
    2.5 mΩ
  • Continuous Drain Current (ID)
    100 A

Download datasheets and manufacturer documentation for IR (Infineon Technologies) IPD031N06L3GATMA1

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IPD031N06L3GATMA1 Overview

IPD031N06L3GATMA1 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have IPD031N06L3GATMA1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. IPD031N06L3GATMA1 is widely used in Appliances. It is manufactured by IR (Infineon Technologies) and distributed by Fans, Tanssion and other distributors. IPD031N06L3GATMA1 can be purchased in many ways. You can place an order directly on this website, or you can call or email us. At present, We have sufficient supplies. In addition our own stock, we can also adjust the inventory to the peer distributors to meet your needs. If the supply of IPD031N06L3GATMA1 is insufficient, we also have other models under the Discrete Semiconductor Transistors - FETs, MOSFETs - Single category to replace it. Fans provides a 1-year warranty to customers who have purchased this part to ensure that our customers have a wonderful purchasing experience and are willing to establish a long-term relationship with Fans. So you can order IPD031N06L3GATMA1 from Fans with confidence. About delivery, we can deliver goods to our customers through a variety of logistics, such as DHL, FedEx, UPS, TNT and EMS or any other freight forwarder. If you want to know more about the freight, feel free to contact us for more details.

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IPD031N06L3GATMA1 Information

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The three parts on the right have similar specifications to IR (Infineon Technologies) IPD031N06L3GATMA1.

  • Image

    Part Number
    Manufacturer
    Series
    Package
    FET Type
    Vgs (Max)
    Technology
    FET Feature
    Part Status
    Mounting Type
    Package / Case
    Vgs(th) (Max) @ Id
    Operating Temperature
    Rds On (Max) @ Id, Vgs
    Power Dissipation (Max)
    Supplier Device Package
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Input Capacitance (Ciss) (Max) @ Vds
    Drive Voltage (Max Rds On, Min Rds On)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    View Compare
  • IRFZ20
    IRFZ20
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    100mOhm @ 10A, 10V
    40W (Tc)
    TO-220AB
    17 nC @ 10 V
    50 V
    850 pF @ 25 V
    10V
    15A (Tc)
    -
  • IRF9610
    IRF9610
    Vishay / Siliconix
    -
    Tube
    P-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    3Ohm @ 900mA, 10V
    20W (Tc)
    TO-220AB
    11 nC @ 10 V
    200 V
    170 pF @ 25 V
    10V
    1.8A (Tc)
    -
  • IRF9640
    IRF9640
    Vishay / Siliconix
    -
    Tube
    P-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    500mOhm @ 6.6A, 10V
    125W (Tc)
    TO-220AB
    44 nC @ 10 V
    200 V
    1200 pF @ 25 V
    10V
    11A (Tc)
    -
  • IRFZ24
    IRFZ24
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 175°C (TJ)
    100mOhm @ 10A, 10V
    60W (Tc)
    TO-220AB
    25 nC @ 10 V
    60 V
    640 pF @ 25 V
    10V
    17A (Tc)
    -
  • IRLD110
    IRLD110
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±10V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    4-DIP (0.300", 7.62mm)
    2V @ 250µA
    -55°C ~ 175°C (TJ)
    540mOhm @ 600mA, 5V
    1.3W (Ta)
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The three parts on the right have similar specifications to IR (Infineon Technologies) IPD031N06L3GATMA1
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  • IPD031N06L3GATMA1 PDF
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  • IPD031N06L3GATMA1 Part
  • IPD031N06L3GATMA1 RFQ
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