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Di***ey : DMN1045UFR4-7 Diodes Incorporated
DMN1045UFR4-7 ; Input Capacitance (Ciss) (Max) @ Vds. 375 pF @ 10 V ; FET Feature. - ; Power Dissipation (Max). 500mW (Ta) ; Operating Temperature. -55°C ~ 150°C ( ...
Di***s Incorporated : DMN1045UFR4
Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8.
Mo***r Electronics : DMN1045UFR4-7 Diodes Incorporated
DMN1045UFR4-7 Diodes Incorporated MOSFET N-Ch Enh Mode FET 12V 3.2A 8Vgss datasheet, inventory, & pricing.
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Explore the detailed technical specifications of DMN1045UFR4-7 by to gain insights into its key features and parameters. Physical. Mount, Surface Mount. Number ...
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DMN1045UFR4-7 ; Description, Value ; Continuous Drain Current Id, 3.2 ; Drain Source On State Resistance, 45 ; Drain Source Voltage Vds, 12 ; Power Dissipation, 26
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37342 products — DMN1045UFR4-7 Diodes Incorporated US$0.1427 - 12V 3.2A 45mΩ@4.5V,3.2A 500mW N Channel X2-DFN1010-3 MOSFETs ROHS datasheet, price, ...
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DMN1045UFR4-7DIODES INCORPORATED ; Type of transistor. N-MOSFET ; Polarisation. unipolar ; Drain-source voltage. 12V ; Drain current. 3.2A ; Power dissipation. 26W
Ne***k Electronics : DMN1045UFR4-7 Diodes Inc., MOSFET, N-CH, 12V
Manufacturer Part No. DMN1045UFR4-7. Manufacturer: DIODES INC. Newark Part No.: 28AK8473. Transistor Polarity: N Channel. Channel Type:.
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Download the DMN1045UFR4-7 datasheet from Diodes Inc.. Mosfet, N-Ch, 12V, 3.2A, X2-Dfn1010 Rohs: Yes |Diodes Inc. DMN1045UFR4-7.
el***nt14 : DMN1045UFR4-7 - Diodes Inc. - 功率场效应管, MOSFET, ...
DMN1045UFR4-7. 功率场效应管, MOSFET, N通道, 12 V, 3.2 A, 0.025 ohm, X2-DFN1010 ...