Li***lfuse : IXTH14N80
The High Voltage series of N-Channel Standard MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, ...
Mo***r Electronics : IXTH14N80 IXYS
IXTH14N80 IXYS MOSFET 14 Amps 800V 0.7 Rds datasheet, inventory, & pricing.
Di***ey : IXTH14N80 IXYS | Discrete Semiconductor Products
IXTH14N80 ; Package. Tube ; Product Status. Obsolete ; Technology. MOSFET (Metal Oxide) ; Drive Voltage (Max Rds On, Min Rds On). 10V ; Rds On (Max) @ Id, Vgs.
Oc***art : IXTH14N80 IXYS - Transistors - Distributors, Price, ...
Find the best pricing for IXYS IXTH14N80 by bulk discounts from distributors. Octopart is the world's source for IXTH14N80 availability, pricing, ...
AL***TASHEET : IXTH14N80 Datasheet(PDF) - IXYS Corporation
MegaMOS™ FET. N-Channel Enhancement Mode. Features • International standard package • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure
Da***heetsPDF : IXTH14N80 Datasheet, Equivalent, N-Channel MOSFET.
INCHANGE IXTH14N80 | MOSFET. isc N-Channel MOSFET Transistor FEATURES ·Drain Current ID= 14A@ TC=25℃ ·Drain Source Voltage- : VD.
Da***heetsPDF : IXTH14N80 Datasheet, Equivalent, MegaMOS MFET.
IXYS IXTH14N80 | MFET. MegaMOSTMFET N-Channel Enhancement Mode IXTH 14N80 VDSS = 800 V ID25 = 14 A RDS(on) = 0.70 Ω Symb.
Al***ransistors. Datasheet : IXTH14N80 MOSFET. Datasheet pdf. Equivalent
Equivalent. Type Designator: IXTH14N80. Type of Transistor: MOSFET. Type of Control Channel: N -Channel. Maximum Power Dissipation (Pd): 300 W.
Di***ip : IXTH14N80 datasheet - Megamos(tm) Fet: 800v, 14a
IXTH14N80 Megamos(tm) Fet: 800v, 14a . Test Conditions to 150°C; RGS 1 M Continuous Transient = 25°C, pulse width limited by TJM = 25°C. Max. lead ...
av***res : AVspares Part number IXTH14N80
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