Mo***r Electronics : IXKH47N60C IXYS | Mouser
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Di***ey : IXKR47N60C5 IXYS | Discrete Semiconductor Products | DigiKey
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Di***ey : IXKR47N60C5 IXYS | Discrete Semiconductor Products
IXKR47N60C5 ; Manufacturer Standard Lead Time. 75 Weeks ; Detailed Description. N-Channel 600 V 47A (Tc) Through Hole ISOPLUS247™ ; Datasheet, Datasheet ; Package.
Mo***r Electronics : IXKR47N60C5 IXYS
Specifications ; Vds - Drain-Source Breakdown Voltage: 600 V ; Id - Continuous Drain Current: 47 A ; Rds On - Drain-Source Resistance: 40 mOhms ; Vgs - Gate-Source ...
Li***lfuse : IXKR47N60C5
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and ...
TM*** : IXKR47N60C5 IXYS - Transistor: N-MOSFET | unipolar; 600V
IXKR47N60C5IXYS ; Type of transistor. N-MOSFET ; Polarisation. unipolar ; Drain-source voltage. 600V ; Drain current. 47A ; Power dissipation. 278W.
TT*** : IXKR47N60C5 - IXYS Part Detail
IXKR47N60C5 ; Packaging, Tube ; Product Type, MOSFET ; Qg - Gate Charge, 150 nC ; Rds On - Drain-Source Resistance, 40 mOhms ; Rise Time, 20 ns.
Ar*** Electronics : IXKR47N60C5 by IXYS | MOSFETs
Home · Categories · Diodes, Transistors and Thyristors · FET Transistors · MOSFETs · IXKR47N60C5 - IXYS.
Ar*** Electronics : Littelfuse IXKR47N60C5 MOSFETs
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Fu***e Electronics : IXKR47N60C5 in Tube by IXYS | Mosfets
IXYS IXKR47N60C5 - Technical Attributes ; Drain-to-Source Voltage [Vdss]:, 600V ; Drain-Source On Resistance-Max: 45mΩ ; Qg Gate Charge: 150nC ; Package Style: ...
AL***TASHEET : IXKR47N60C5 Datasheet(PDF) - IXYS Corporation
Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge, IXKR47N60C5 ...
Al***press : Ixkr47n60c5 Ixkr47n60 Isoplus247 Plus247 N-channel ...
IXKR47N60C5 IXKR47N60 ISOPLUS247 PLUS247 N-CHANNEL POWER MOSFET TRANSISTOR MOS FET TUBE 10PCS/LOT ORIGINAL NEW · Model NumberIXKR47N60C5 · Item TypeHybrid ...