Mo***r Electronics : IXFR200N10P IXYS
IXFR200N10P IXYS MOSFET 133 Amps 100V 0.0075 Rds datasheet, inventory, & pricing. ... Build or request PCB Symbol, Footprint or Model for IXFR200N10P.
Li***lfuse : IXFR200N10P
IXFR200N10P. Symbol. Test Conditions. Characteristic Values. (TJ = 25 C, unless otherwise specified). Min. Typ. Max. gfs. VDS = 10V, ID = 60A, Note 1.
Li***lfuse : IXFR200N10P
Find information for part IXFR200N10P from the Polar™ Series N Channel HiPerFETs, or search for Power Semiconductors and more Discrete MOSFETs from ...
Di***ey : IXFR200N10P IXYS | Discrete Semiconductor Products
IXFR200N10P ; Input Capacitance (Ciss) (Max) @ Vds. 7600 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 300W (Tc) ; Operating Temperature. -55°C ~ 175°C (TJ).
TM*** : IXFR200N10P IXYS - Transistor: N-MOSFET | unipolar; 100V
IXFR200N10PIXYS ; Manufacturer. IXYS ; Type of transistor. N-MOSFET ; Polarisation. unipolar ; Drain-source voltage. 100V ; Drain current. 120A.
Da***heetsPDF : IXFR200N10P Datasheet, Equivalent, Power MOSFET.
Advanced Technical Information PolarTM HiPerFET Power MOSFET Electrically Isol ated Tab IXFR 200N10P VDSS ID25 RDS( on) = 100 V = 133 A = 8 mΩ N-Channe l ...
Da***heetsPDF : IXFR200N10P Datasheet | IXYS Corporation
Part Number, IXFR200N10P. Description, PolarTM HiPerFET Power MOSFET. Feature, Advanced Technical Information PolarTM HiPerFET Power MOSFET Electrically ...
AL***TASHEET : IXFR200N10P Datasheet(PDF) - IXYS Corporation
PolarTM HiPerFET Power MOSFET, IXFR200N10P Datasheet, IXFR200N10P circuit, IXFR200N10P data sheet : IXYS, alldatasheet, Datasheet, Datasheet search site for ...
Al***ransistors. Datasheet : IXFR200N10P MOSFET. Datasheet pdf. Equivalent
Equivalent. Type Designator: IXFR200N10P. Type of Transistor: MOSFET. Type of Control Channel: N -Channel. Maximum Power Dissipation (Pd): 300 W.