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mi***-semiconductor : IXYS IXFN520N075T2 - Discrete Semiconductor
IXYS IXFN520N075T2 100% New & Original, Great Prices and Fast Delivery. We...
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Mo***r Electronics : IXFN520N075T2 IXYS
IXFN520N075T2 IXYS Discrete Semiconductor Modules GigaMOS Trench T2 HiperFET PWR MOSFET datasheet, inventory, & pricing.
Di***ey : IXFN520N075T2 IXYS | Discrete Semiconductor Products
Order today, ships today. IXFN520N075T2 – N-Channel 75 V 480A (Tc) 940W (Tc) Chassis Mount SOT-227B from IXYS. Pricing and Availability on millions of ...
Li***lfuse : IXFN520N075T2
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC).
TT*** : IXFN520N075T2 - IXYS Part Detail
IXFN520N075T2 ; Type, Trench ; Typical Turn-Off Delay Time, 80 ns ; Vds - Drain-Source Breakdown Voltage, 75 V ; Vgs th - Gate-Source Threshold Voltage, 2.5 V ...
TM*** : IXFN520N075T2 IXYS - Module | single transistor; 75V; 480A
Specification ; Type of module. MOSFET transistor ; Semiconductor structure. single transistor ; Drain-source voltage. 75V ; Drain current. 480A ; Case. SOT227B.
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Fu***e Electronics : IXFN520N075T2 in Tube by IXYS | Mosfets
Manufacturer Part #. IXFN520N075T2. N-Channel 75 V 940 W 545 nC TranchT2 HiperFET Power MosFet SMT - SOT-227. IXFN520N075T2 Datasheet. ECAD Model:.
oz***an : IXFN520N075T2
1.9 m . TrenchT2TM. GigaMOSTM HiperFETTM. Power MOSFET. N-Channel Enhancement Mode. Avalanche Rated. Fast Intrinsic Diode. IXFN520N075T2. DS100193B(4/18).
Al***ransistors. Datasheet : IXFN520N075T2 MOSFET. Datasheet pdf. Equivalent
Equivalent. Type Designator: IXFN520N075T2. Type of Transistor: MOSFET. Type of Control Channel: N -Channel. Maximum Power Dissipation (Pd): 940 W.