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IXFK160N30T ; Input Capacitance (Ciss) (Max) @ Vds. 28000 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 1390W (Tc) ; Operating Temperature. -55°C ~ 150°C ( ...
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IXFK160N30T IXYS MOSFET 160A 300V datasheet, inventory, & pricing.
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N-Channel Enhancement Mode. Avalanche Rated. Fast Intrinsic Diode. IXFK160N30T ... IXFK160N30T. IXFX160N30T. Note 1: Pulse test, t 300 s, duty cycle, ...
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Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low ...
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TM*** : IXFK160N30T IXYS - Transistor: N-MOSFET | GigaMOS
IXYS IXFK160N30T | Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 160A; 1390W; TO264 - This product is available in Transfer Multisort Elektronik.
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IXFK160N30T Power MOSFET datasheet pdf provided by Datasheetspdf ... Mode Avalanche Rated Fast Intrinsic Diode IXFK160N30T IXFX160N30T RDS(on) ...
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Symbol. Test Conditions. Maximum Ratings. VDSS. TJ. = 25°C to 150°C. 300. V. VDGR. TJ. = 25°C to 150°C, RGS = 1MΩ. 300. V. VGSS. Continuous.