Di***ey : IXFH18N60X IXYS | Discrete Semiconductor Products
IXFH18N60X ; Technology. MOSFET (Metal Oxide) ; Drain to Source Voltage (Vdss). 600 V ; Current - Continuous Drain (Id) @ 25°C · 18A (Tc) ; Drive Voltage (Max Rds On ...
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IXFH18N60X IXYS MOSFET MSFT N-CH ULTRA JNCT X3&44 datasheet, inventory, & pricing.
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Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high ...
Da***heetsPDF : IXFH18N60X Datasheet | IXYS
X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFA18N60X IXFP18N60X IXFH18N60X VDSS = ID25 = RDS(on) 600V 18A 230m N-Channel Enhancement ...
Al***ransistors. Datasheet : IXFH18N60X MOSFET. Datasheet pdf. Equivalent
Equivalent. Type Designator: IXFH18N60X. Type of Transistor: MOSFET. Type of Control Channel: N -Channel. Maximum Power Dissipation (Pd): 320 W.
Oc***art : IXFH18N60X Littelfuse | Distributors, Price, and ...
Littelfuse IXFH18N60X ; Technical. Drain to Source Voltage (Vdss), 600 V · Power Dissipation, 320 W · Rds On Max, 230 mΩ. Reverse Recovery Time, 127 ns ; Littelfuse ...
AL***TASHEET : IXFH18N60X Datasheet(PDF) - IXYS Corporation
Preliminary Technical Information, IXFH18N60X Datasheet, IXFH18N60X circuit, IXFH18N60X data sheet : IXYS, alldatasheet, Datasheet, Datasheet search site ...
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oz***an : IXFA18N60X IXFP18N60X IXFH18N60X
Symbol. Test Conditions. Maximum Ratings. VDSS. TJ. = 25 C to 150 C. 600. V. VDGR. TJ. = 25 C to 150 C, RGS = 1M .