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by V Siliconix · Cited by 7 — SiR166DP-T1-GE3. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-source voltage.
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SIR166DP-T1-GE3 – N-Channel 30 V 40A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8 ... SIR166DP-T1-GE3 is out of stock and can be placed on backorder.
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SIR166DP-T1-GE3 Vishay Semiconductors MOSFET 30V Vds 20V Vgs PowerPAK SO-8 datasheet, inventory, & pricing.
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MOSFET,N CH,DIODE,30V,40A,PPAKSO8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2600µohm; ...
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SIR166DP-T1-GE3 ; Packaging, Reel ; Pd - Power Dissipation, 48 W ; Product Type, MOSFET ; Qg - Gate Charge, 77 nC ; Rds On - Drain-Source Resistance, 3.2 mOhms.
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Part No. SIR166DP-T1-GE3. Download, SIR166DP-T1-GE3 Click to view. File Size, 114.5 Kbytes. Page, 7 Pages. Manufacturer, VISHAY [Vishay Siliconix].
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AL***TASHEET : SIR166DP-T1-GE3 Datasheet, PDF
SIR166DP-T1-GE3 Datasheet N-Channel 30-V (D-S) MOSFET - Vishay Siliconix N-Channel 30 V (D-S) MOSFET.