TT*** : SI2312BDS-T1-E3 at TTI - Order Online, Fast Shipping
More In Stock Inventory of Vishay Products Than Any Other Distributor. Inventory, Pricing, and Datasheets. Over 50 Years in Business. Extensive Inventory. ISO Certified.
Di***ey : SI2312BDS-T1-E3 Vishay Siliconix | Discrete Semiconductor...
Buy Diodes, Thyristors, Transistors and More Semiconductor Products at Digi-Key! ISO 9001:2015 Certified. 24 Hour Customer Service. Broadest BOM Coverage. Same Day Shipping. Rated #1 for Performance. World's Largest Selection. Apple & Google Pay.
Mo***r Electronics : SI2312BDS-T1-E3 Vishay Semiconductors | Mouser
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate ...
Di***ey : SI2312BDS-T1-E3 Vishay Siliconix - Digikey
Order today, ships today. SI2312BDS-T1-E3 – N-Channel 20 V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236) from Vishay Siliconix.
Di***ey : SI2312BDS-T1-GE3 Vishay Siliconix
Order today, ships today. SI2312BDS-T1-GE3 – N-Channel 20 V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236) from Vishay Siliconix.
Vi***y : Si2312BDS N-Channel 20 V (D-S) MOSFET
Apr 5, 2010 — Ordering Information: Si2312BDS-T1-E3 (Lead (Pb)-free). Si2312BDS-T1-GE3 (Lead (Pb)-free and Halogen-free). * Marking Code. Si2312BDS (M2)*.
Oc***art : Vishay SI2312BDS-T1-E3 - MOSFETs
Vishay SI2312BDS-T1-E3. Single N-Channel 20 V 0.031 Ohms Surface Mount Power Mosfet - SOT-23. $ 268
Oc***art : Vishay SI2312BDS-T1-GE3 - MOSFETs
Vishay SI2312BDS-T1-GE3 ; Case/Package, SOT-23 ; Mount, Surface Mount ; Number of Pins, 3 ; Weight, 1.437803 g ; Technical. Continuous Drain Current (ID), 5 A. Drain ...
Al***bout Circuits : SI2312BDS-T1-E3 Vishay - Datasheet PDF, Footprint, ...
Download the SI2312BDS-T1-E3 datasheet from Vishay. Transistor: N-MOSFET; unipolar; 20V; 3.9A; 0.031ohm; 0.75W; -55+150 deg; SMD; SOT23.
TT*** : SI2312BDS-T1-BE3 - Vishay / Siliconix Part Detail
SI2312BDS-T1-BE3 ; Vds - Drain-Source Breakdown Voltage, 20 V ; Vgs th - Gate-Source Threshold Voltage, 850 mV ; Part # Aliases, SI2312BDS-T1-E3 ; comliantYes
TT*** : SI2312BDS-T1-E3 - Vishay Semiconductors Part Detail
SI2312BDS-T1-E3 ; Pd - Power Dissipation, 1.25 W ; Product Type, MOSFET ; Qg - Gate Charge, 12 nC ; Rds On - Drain-Source Resistance, 31 mOhms ; Rise Time, 30 ns.
Fa***ll : SI2312BDS-T1-E3 Vishay, Power MOSFET, N Channel, 20 V
The SI2312BDS-T1-E3 is a 20VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode. 100% Rg tested; -55 to 150°C Operating temperature ...