Mo***r Electronics : 2SA1955FVATPL3Z Toshiba
2SA1955FVATPL3Z Toshiba Bipolar Transistors - BJT PNP Trans -0.4A LN -12V VCEO datasheet, inventory, & pricing.
Di***ey : 2sa1955fvatpl3z - Discrete Semiconductor Products
2SA1955FVATPL3Z – Bipolar (BJT) Transistor PNP 12 V 400 mA 130MHz 100 mW Surface Mount CST3 from Toshiba Semiconductor and Storage.
Oc***art : 2SA1955FVATPL3Z Toshiba - BJTs - Distributors and Price ...
Physical. Case/Package, SOT-723. Mount, Surface Mount. Technical. Collector Emitter Breakdown Voltage, 12 V. Collector Emitter Saturation Voltage, -30 mV.
se***on-storage : RN4988 | Bipolar Transistors | Asia-English
Characteristics, Symbol, Rating, Unit. Collector Current (Q1), IC, 0.1, A. Collector Current (Q2), IC, -0.1, A. Collector-emitter voltage (Q1), VCEO, 50, V.
se***on-storage : RN2314 | Bipolar Transistors | Asia-English
Package Information ; Package Code, SOT-323 ; Pins, 3 ; Mounting, Surface Mount ; Width×Length×Height (mm), 2.0×2.1×0.9 ; Width×Length×Height (mm) ...
av***res : AVspares Part number 2SA1955FVATPL3Z
3 days ago — It looks like your searching for part 2SA1955FVATPL3Z. We have 18 listings matching 2SA1955FVATPL3Z in 3 countries ...
Ch***Inventory : 2SA1955FVATPL3Z | Toshiba Semiconductor and Storage
Part Number: 2SA1955FVATPL3Z ; Manufacturer: Toshiba Semiconductor and Storage ; Description: TRANS PNP 12V 0.4A VESM ; Category: Discrete Semiconductor Products.
zs*** : Toshiba Electronic Devices and Storage Corporation ...
This 2SA1955FVATPL3Z Transistors - Bipolar (BJT) - Single is manufactured by Toshiba Electronic Devices and Storage Corporation, a trusted name in the industry ...
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We have been engaged in the distribution of electronic since 2008. The is headquartered in Shenzhen (Silicon Valley of China). Our main ...